Free-standing two-dimensional ferro-ionic memristor.

Autor: Lee J; School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, Republic of Korea. jason.lee@g.skku.edu.; Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, Republic of Korea. jason.lee@g.skku.edu., Woo G; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea. dnwhddms12@g.skku.edu.; Department of Nano Science and Technology, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea. dnwhddms12@g.skku.edu., Cho J; School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, Republic of Korea., Son S; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.; Department of Nano Science and Technology, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea., Shin H; Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea., Seok H; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.; Department of Nano Science and Technology, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea., Kim MJ; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.; Department of Nano Science and Technology, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea., Kim E; AVP Process Development Team, Samsung Electronics, Chungcheongnam-do, Cheonan-si, 31086, Republic of Korea., Wang Z; School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, Republic of Korea., Kang B; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.; Department of Nano Science and Technology, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.; Department of Nano Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea., Jang WJ; Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, Republic of Korea.; Department of Physics, Ewha Womans University, Seoul, 03760, Republic of Korea., Kim T; School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, Republic of Korea. tkim@skku.edu.; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea. tkim@skku.edu.; Department of Nano Science and Technology, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea. tkim@skku.edu.; Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea. tkim@skku.edu.; Department of Nano Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea. tkim@skku.edu.
Jazyk: angličtina
Zdroj: Nature communications [Nat Commun] 2024 Jun 18; Vol. 15 (1), pp. 5162. Date of Electronic Publication: 2024 Jun 18.
DOI: 10.1038/s41467-024-48810-3
Abstrakt: Two-dimensional (2D) ferroelectric materials have emerged as significant platforms for multi-functional three-dimensional (3D) integrated electronic devices. Among 2D ferroelectric materials, ferro-ionic CuInP 2 S 6 has the potential to achieve the versatile advances in neuromorphic computing systems due to its phase tunability and ferro-ionic characteristics. As CuInP 2 S 6 exhibits a ferroelectric phase with insulating properties at room temperature, the external temperature and electrical field should be required to activate the ferro-ionic conduction. Nevertheless, such external conditions inevitably facilitate stochastic ionic conduction, which completely limits the practical applications of 2D ferro-ionic materials. Herein, free-standing 2D ferroelectric heterostructure is mechanically manipulated for nano-confined conductive filaments growth in free-standing 2D ferro-ionic memristor. The ultra-high mechanical bending is selectively facilitated at the free-standing area to spatially activate the ferro-ionic conduction, which allows the deterministic local positioning of Cu + ion transport. According to the local flexoelectric engineering, 5.76×10 2 -fold increased maximum current is observed within vertical shear strain 720 nN, which is theoretically supported by the 3D flexoelectric simulation. In conclusion, we envision that our universal free-standing platform can provide the extendable geometric solution for ultra-efficient self-powered system and reliable neuromorphic device.
(© 2024. The Author(s).)
Databáze: MEDLINE
Externí odkaz: