Epitaxial Growth of Large-Area Monolayers and van der Waals Heterostructures of Transition-Metal Chalcogenides via Assisted Nucleation.

Autor: Rajan A; SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK., Buchberger S; SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK.; Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, 01187, Dresden, Germany., Edwards B; SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK., Zivanovic A; SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK.; Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, 01187, Dresden, Germany., Kushwaha N; SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK.; STFC Central Laser Facility, Research Complex at Harwell, Harwell Campus, Didcot, OX11 0QX, UK., Bigi C; SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK., Nanao Y; SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK., Saika BK; SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK., Armitage OR; SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK., Wahl P; SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK.; Physikalisches Institut, Universität Bonn, Nussallee 12, 53115, Bonn, Germany., Couture P; Ion Beam Centre, University of Surrey, Guildford, Surrey, GU2 7XH, UK., King PDC; SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Aug; Vol. 36 (33), pp. e2402254. Date of Electronic Publication: 2024 Jun 28.
DOI: 10.1002/adma.202402254
Abstrakt: The transition-metal chalcogenides include some of the most important and ubiquitous families of 2D materials. They host an exceptional variety of electronic and collective states, which can in principle be readily tuned by combining different compounds in van der Waals heterostructures. Achieving this, however, presents a significant materials challenge. The highest quality heterostructures are usually fabricated by stacking layers exfoliated from bulk crystals, which - while producing excellent prototype devices - is time consuming, cannot be easily scaled, and can lead to significant complications for materials stability and contamination. Growth via the ultra-high vacuum deposition technique of molecular-beam epitaxy (MBE) should be a premier route for 2D heterostructure fabrication, but efforts to achieve this are complicated by non-uniform layer coverage, unfavorable growth morphologies, and the presence of significant rotational disorder of the grown epilayer. This work demonstrates a dramatic enhancement in the quality of MBE grown 2D materials by exploiting simultaneous deposition of a sacrificial species from an electron-beam evaporator during the growth. This approach dramatically enhances the nucleation of the desired epi-layer, in turn enabling the synthesis of large-area, uniform monolayers with enhanced quasiparticle lifetimes, and facilitating the growth of epitaxial van der Waals heterostructures.
(© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.)
Databáze: MEDLINE
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