Study on different isolation technology on the performance of blue micro-LEDs array applications.

Autor: Lin SH; Institute of Electrics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Lo YY; Department of Photonis, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Hsu YH; Department of Photonis, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Lin CC; Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617, Taiwan, ROC., Zan HW; Department of Photonis, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Lin YH; Department of Photonis, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC., Wuu DS; Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou, 54561, Taiwan, ROC., Hsiao CL; Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, 581 83, Linköping, Sweden., Horng RH; Institute of Electrics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC. rayhua@nycu.edu.tw.
Jazyk: angličtina
Zdroj: Discover nano [Discov Nano] 2024 Jun 13; Vol. 19 (1), pp. 102. Date of Electronic Publication: 2024 Jun 13.
DOI: 10.1186/s11671-024-04047-z
Abstrakt: In this study, a 3 × 3 blue micro-LED array with a pixel size of 10 × 10 μm 2 and a pitch of 15 μm was fabricated on an epilayer grown on a sapphire substrate using metalorganic chemical vapor deposition technology. The fabrication process involved photolithography, wet and dry etching, E-beam evaporation, and ion implantation technology. Arsenic multi-energy implantation was utilized to replace the mesa etching for electrical isolation, where the implantation depth increased with the average energy. Different ion depth profiles had varying effects on electrical properties, such as forward current and leakage currents, potentially causing damage to the n-GaN layer and increasing the series resistance of the LEDs. As the implantation depth increased, the light output power and peak external quantum efficiency of the LEDs also increased, improving from 5.33 to 9.82%. However, the efficiency droop also increased from 46.3 to 48.6%.
(© 2024. The Author(s).)
Databáze: MEDLINE
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