Charge Trapping and Defect Dynamics as Origin of Memory Effects in Metal Halide Perovskite Memlumors.

Autor: Marunchenko A; Chemical Physics and NanoLund, Lund University, P.O. Box 124, 22100 Lund, Sweden.; School of Physics and Engineering, ITMO University, 49 Kronverksky, St. Petersburg 197101, Russian Federation., Kumar J; Chemical Physics and NanoLund, Lund University, P.O. Box 124, 22100 Lund, Sweden., Kiligaridis A; Chemical Physics and NanoLund, Lund University, P.O. Box 124, 22100 Lund, Sweden., Rao SM; Chemical Physics and NanoLund, Lund University, P.O. Box 124, 22100 Lund, Sweden., Tatarinov D; School of Physics and Engineering, ITMO University, 49 Kronverksky, St. Petersburg 197101, Russian Federation., Matchenya I; School of Physics and Engineering, ITMO University, 49 Kronverksky, St. Petersburg 197101, Russian Federation., Sapozhnikova E; School of Physics and Engineering, ITMO University, 49 Kronverksky, St. Petersburg 197101, Russian Federation., Ji R; Chair for Emerging Electronic Technologies, Technical University of Dresden, Nöthnitzer Straße 61, 01187 Dresden, Germany.; Leibniz-Institute for Solid State and Materials Research Dresden, Helmholtzstraße 20, 01069 Dresden, Germany., Telschow O; Chair for Emerging Electronic Technologies, Technical University of Dresden, Nöthnitzer Straße 61, 01187 Dresden, Germany.; Leibniz-Institute for Solid State and Materials Research Dresden, Helmholtzstraße 20, 01069 Dresden, Germany., Brunner J; Chair for Emerging Electronic Technologies, Technical University of Dresden, Nöthnitzer Straße 61, 01187 Dresden, Germany.; Leibniz-Institute for Solid State and Materials Research Dresden, Helmholtzstraße 20, 01069 Dresden, Germany., Yulin A; School of Physics and Engineering, ITMO University, 49 Kronverksky, St. Petersburg 197101, Russian Federation., Pushkarev A; School of Physics and Engineering, ITMO University, 49 Kronverksky, St. Petersburg 197101, Russian Federation., Vaynzof Y; Chair for Emerging Electronic Technologies, Technical University of Dresden, Nöthnitzer Straße 61, 01187 Dresden, Germany.; Leibniz-Institute for Solid State and Materials Research Dresden, Helmholtzstraße 20, 01069 Dresden, Germany., Scheblykin IG; Chemical Physics and NanoLund, Lund University, P.O. Box 124, 22100 Lund, Sweden.
Jazyk: angličtina
Zdroj: The journal of physical chemistry letters [J Phys Chem Lett] 2024 Jun 20; Vol. 15 (24), pp. 6256-6265. Date of Electronic Publication: 2024 Jun 06.
DOI: 10.1021/acs.jpclett.4c00985
Abstrakt: Large language models for artificial intelligence applications require energy-efficient computing. Neuromorphic photonics has the potential to reach significantly lower energy consumption in comparison with classical electronics. A recently proposed memlumor device uses photoluminescence output that carries information about its excitation history via the excited state dynamics of the material. Solution-processed metal halide perovskites can be used as efficient memlumors. We show that trapping of photogenerated charge carriers modulated by photoinduced dynamics of the trapping states themselves explains the memory response of perovskite memlumors on time scales from nanoseconds to minutes. The memlumor concept shifts the paradigm of the detrimental role of charge traps and their dynamics in metal halide perovskite semiconductors by enabling new applications based on these trap states. The appropriate control of defect dynamics in perovskites allows these materials to enter the field of energy-efficient photonic neuromorphic computing, which we illustrate by proposing several possible realizations of such systems.
Databáze: MEDLINE
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