Ultrafast high-endurance memory based on sliding ferroelectrics.

Autor: Yasuda K; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA.; School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14850, USA., Zalys-Geller E; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA., Wang X; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA., Bennett D; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA., Cheema SS; Research Laboratory of Electronics, MA Institute of Technology, Cambridge, MA, USA., Watanabe K; Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan., Taniguchi T; Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan., Kaxiras E; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA.; Department of Physics, Harvard University, Cambridge, MA 02138, USA., Jarillo-Herrero P; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA., Ashoori R; Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA.
Jazyk: angličtina
Zdroj: Science (New York, N.Y.) [Science] 2024 Jul 05; Vol. 385 (6704), pp. 53-56. Date of Electronic Publication: 2024 Jun 06.
DOI: 10.1126/science.adp3575
Abstrakt: The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional (2D) ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 10 11 switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of 2D sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.
Databáze: MEDLINE
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