Realization of monolayer ZrTe 5 topological insulators with wide band gaps.

Autor: Xu YJ; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China., Cao G; International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, China., Li QY; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China., Xue CL; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China., Zhao WM; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China., Wang QW; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China., Dou LG; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China., Du X; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China., Meng YX; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China., Wang YK; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China., Gao YH; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China., Jia ZY; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China., Li W; Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China., Ji L; Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China., Li FS; Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China., Zhang Z; International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, China.; Hefei National Laboratory, Hefei, China., Cui P; International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, China. cuipg@ustc.edu.cn.; Hefei National Laboratory, Hefei, China. cuipg@ustc.edu.cn., Xing D; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China.; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China., Li SC; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China. scli@nju.edu.cn.; Hefei National Laboratory, Hefei, China. scli@nju.edu.cn.; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. scli@nju.edu.cn.; Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing, China. scli@nju.edu.cn.
Jazyk: angličtina
Zdroj: Nature communications [Nat Commun] 2024 Jun 05; Vol. 15 (1), pp. 4784. Date of Electronic Publication: 2024 Jun 05.
DOI: 10.1038/s41467-024-49197-x
Abstrakt: Two-dimensional topological insulators hosting the quantum spin Hall effect have application potential in dissipationless electronics. To observe the quantum spin Hall effect at elevated temperatures, a wide band gap is indispensable to efficiently suppress bulk conduction. Yet, most candidate materials exhibit narrow or even negative band gaps. Here, via elegant control of van der Waals epitaxy, we have successfully grown monolayer ZrTe 5 on a bilayer graphene/SiC substrate. The epitaxial ZrTe 5 monolayer crystalizes in two allotrope isomers with different intralayer alignments of ZrTe 3 prisms. Our scanning tunneling microscopy/spectroscopy characterization unveils an intrinsic full band gap as large as 254 meV and one-dimensional edge states localized along the periphery of the ZrTe 5 monolayer. First-principles calculations further confirm that the large band gap originates from strong spin-orbit coupling, and the edge states are topologically nontrivial. These findings thus provide a highly desirable material platform for the exploration of the high-temperature quantum spin Hall effect.
(© 2024. The Author(s).)
Databáze: MEDLINE
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