Recent Progress of Quantum Dots Light-Emitting Diodes: Materials, Device Structures, and Display Applications.

Autor: Fan J; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China., Han C; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China., Yang G; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China., Song B; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Department of Materials Science and Engineering, Xiamen University, Xiamen, 361005, P. R. China., Xu R; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham Ningbo China, Ningbo, 315100, P. R. China., Xiang C; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China., Zhang T; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China., Qian L; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Sep; Vol. 36 (37), pp. e2312948. Date of Electronic Publication: 2024 Jun 14.
DOI: 10.1002/adma.202312948
Abstrakt: Colloidal quantum dots (QDs), as a class of 0D semiconductor materials, have generated widespread interest due to their adjustable band gap, exceptional color purity, near-unity quantum yield, and solution-processability. With decades of dedicated research, the potential applications of quantum dots have garnered significant recognition in both the academic and industrial communities. Furthermore, the related quantum dot light-emitting diodes (QLEDs) stand out as one of the most promising contenders for the next-generation display technologies. Although QD-based color conversion films are applied to improve the color gamut of existing display technologies, the broader application of QLED devices remains in its nascent stages, facing many challenges on the path to commercialization. This review encapsulates the historical discovery and subsequent research advancements in QD materials and their synthesis methods. Additionally, the working mechanisms and architectural design of QLED prototype devices are discussed. Furthermore, the review surveys the latest advancements of QLED devices within the display industry. The narrative concludes with an examination of the challenges and perspectives of QLED technology in the foreseeable future.
(© 2024 Wiley‐VCH GmbH.)
Databáze: MEDLINE
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