Reproducible graphene synthesis by oxygen-free chemical vapour deposition.
Autor: | Amontree J; Department of Mechanical Engineering, Columbia University, New York, NY, USA., Yan X; Department of Mechanical Engineering, Columbia University, New York, NY, USA., DiMarco CS; Department of Mechanical Engineering, Columbia University, New York, NY, USA., Levesque PL; Infinite Potential Laboratories, Waterloo, Ontario, Canada.; Département de Chimie, Université de Montréal, Montréal, Quebec, Canada.; Institut Courtois, Université de Montréal, Montréal, Quebec, Canada., Adel T; Quantum Metrology Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA., Pack J; Department of Physics, Columbia University, New York, NY, USA., Holbrook M; Department of Physics, Columbia University, New York, NY, USA., Cupo C; Department of Mechanical Engineering, Columbia University, New York, NY, USA., Wang Z; Department of Mechanical Engineering, Columbia University, New York, NY, USA., Sun D; Department of Physics, Columbia University, New York, NY, USA., Biacchi AJ; Nanoscale Device Characterization Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA., Wilson-Stokes CE; Quantum Metrology Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA.; Department of Mechanical Engineering, Howard University, Washington, DC, USA., Watanabe K; Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan., Taniguchi T; Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan., Dean CR; Department of Physics, Columbia University, New York, NY, USA., Hight Walker AR; Quantum Metrology Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA., Barmak K; Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA. kb2612@columbia.edu., Martel R; Département de Chimie, Université de Montréal, Montréal, Quebec, Canada. r.martel@umontreal.ca.; Institut Courtois, Université de Montréal, Montréal, Quebec, Canada. r.martel@umontreal.ca., Hone J; Department of Mechanical Engineering, Columbia University, New York, NY, USA. jh2228@columbia.edu. |
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Jazyk: | angličtina |
Zdroj: | Nature [Nature] 2024 Jun; Vol. 630 (8017), pp. 636-642. Date of Electronic Publication: 2024 May 29. |
DOI: | 10.1038/s41586-024-07454-5 |
Abstrakt: | Chemical vapour deposition (CVD) synthesis of graphene on copper has been broadly adopted since the first demonstration of this process 1 . However, widespread use of CVD-grown graphene for basic science and applications has been hindered by challenges with reproducibility 2 and quality 3 . Here we identify trace oxygen as a key factor determining the growth trajectory and quality for graphene grown by low-pressure CVD. Oxygen-free chemical vapour deposition (OF-CVD) synthesis is fast and highly reproducible, with kinetics that can be described by a compact model, whereas adding trace oxygen leads to suppressed nucleation and slower/incomplete growth. Oxygen affects graphene quality as assessed by surface contamination, emergence of the Raman D peak and decrease in electrical conductivity. Epitaxial graphene grown in oxygen-free conditions is contamination-free and shows no detectable D peak. After dry transfer and boron nitride encapsulation, it shows room-temperature electrical-transport behaviour close to that of exfoliated graphene. A graphite-gated device shows well-developed integer and fractional quantum Hall effects. By highlighting the importance of eliminating trace oxygen, this work provides guidance for future CVD system design and operation. The increased reproducibility and quality afforded by OF-CVD synthesis will broadly influence basic research and applications of graphene. (© 2024. The Author(s), under exclusive licence to Springer Nature Limited.) |
Databáze: | MEDLINE |
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