A band gap and photoluminescence properties engineering in BaO semiconductor for ultraviolet (UV) photodetector applications: A comprehensive role of co-doping.

Autor: Saleem S; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China. Electronic address: shahrozkamboh1@gmail.com., Jameel MH; Department of Physics and Chemistry, Faculty of Applied Sciences and Technology (FAST), Universiti Tun Hussein Onn Malaysia, 84600 Muar, Johor, Malaysia. Electronic address: mhasnainjamil@gmail.com., Yasin A; School of Materials Science and Engineering, and Henan Key Laboratory of Advanced Magnesium Alloy and Key Laboratory of Materials Processing and Mold Technology, Zhengzhou University, Zhengzhou, China., Mayzan MZHB; Department of Physics and Chemistry, Faculty of Applied Sciences and Technology (FAST), Universiti Tun Hussein Onn Malaysia, 84600 Muar, Johor, Malaysia., Ullah A; School of Chemistry and Chemical Engineering, Shaanxi Normal University, 710119 Shaanxi, Xian, PR China., Althubeiti K; Department of Chemistry, College of Science, Taif University, P.O. BOX. 110, 21944 Taif, Saudi Arabia., Aljohani M; Department of Chemistry, College of Science, Taif University, P.O. BOX. 110, 21944 Taif, Saudi Arabia., Bashir J; Department of Physics, University of Agriculture Faisalabad, 38040, Pakistan.
Jazyk: angličtina
Zdroj: Journal of colloid and interface science [J Colloid Interface Sci] 2024 Sep 15; Vol. 670, pp. 599-616. Date of Electronic Publication: 2024 May 18.
DOI: 10.1016/j.jcis.2024.05.107
Abstrakt: We report on ultra-violet (UV) photodetectors based on BaO nanoparticles by the detailed investigation of band gap and photoluminescence properties. The BaO nanomaterials were fabricated by the modified sol-gel technique. The innovation of co-doping can modulate the photoluminescence or sensing properties by narrowing the band gap related to enhancing the high carrier concentration, higher electronic lifetime, and low carriers recombination. It is investigated that the BaO nanoparticles with co-doping reveals a highly reduced band gap and exceptional photoluminescence properties as compared to the pristine BaO nanoparticles due to hindering carrier , s recombination for Ultra-violet (UV) photodetectors. The optical studies revealed that the addition of co-dopants in BaO host material creates new energy sites, so the band gap declines up to 1.31 eV as compared to that of pristine BaO (1.36 eV). The photoluminescence properties recorded with photoluminescence (PL) spectroscopy were recorded which revealed the decrease in PL intensity due to the hindering of carriers recombination with the addition of co-dopant metal ions. Furthermore, the inclusion of co-dopant metals results in an improvement in electrical conductivity because of a decline in carrier recombination, according to an I-V characteristic study. This factor contributes to enhance the photoluminescence properties of BaO which, in turn, contributes to enhance the sensing capability of the photodetector device. These obtained features modify optoelectronic properties are far superior as compared to that of previously reported literature on BaO nanomaterials, and the synthesized BaO semiconductor material becomes a potential candidate for efficient use in the ultraviolet (UV) photodetectors device applications.
Competing Interests: Declaration of competing interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
(Copyright © 2024 Elsevier Inc. All rights reserved.)
Databáze: MEDLINE
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