| Autor: |
Cho K; Department of Chemistry and Nanoscience, Ewha Womans University, Seoul 03760, Republic of Korea., Park Y; Department of Chemistry and Nanoscience, Ewha Womans University, Seoul 03760, Republic of Korea., Jo H; Department of Chemistry, Yeungnam University, Gyeongsan 38541, Republic of Korea., Seo S; Department of Chemistry, Yeungnam University, Gyeongsan 38541, Republic of Korea., Moon J; Department of Chemistry and Nanoscience, Ewha Womans University, Seoul 03760, Republic of Korea., Lee SJ; Department of Chemistry, Yeungnam University, Gyeongsan 38541, Republic of Korea., Park SY; Department of Chemistry, Yeungnam University, Gyeongsan 38541, Republic of Korea., Yoon SJ; Department of Chemistry, Yeungnam University, Gyeongsan 38541, Republic of Korea., Park J; Department of Chemistry and Nanoscience, Ewha Womans University, Seoul 03760, Republic of Korea. |
| Abstrakt: |
We analyze the stability and photophysical dynamics of CsPbBr 3 perovskite quantum dots (PeQDs), fabricated under mild synthetic conditions and embedded in an amorphous silica (SiO x ) matrix (CsPbBr 3 @SiO x ), underscoring their sustained performance in ambient conditions for over 300 days with minimal optical degradation. However, this stability comes at the cost of a reduced photoluminescence efficiency. Time-resolved spectroscopic analyses, including flash-photolysis time-resolved microwave conductivity and time-resolved photoluminescence, show that excitons in CsPbBr 3 @SiO x films decay within 2.5 ns, while charge carriers recombine over approximately 230 ns. This longevity of the charge carriers is due to photoinduced electron transfer to the SiO x matrix, enabling hole retention. The measured hole mobility in these PeQDs is 0.880 cm 2 V -1 s -1 , underscoring their potential in optoelectronic applications. This study highlights the role of the silica matrix in enhancing the durability of PeQDs in humid environments and modifying exciton dynamics and photoluminescence, providing valuable insights for developing robust optoelectronic materials. |
