| Autor: |
van Efferen C; II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, 50937 Köln, Germany., Hall J; II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, 50937 Köln, Germany., Atodiresei N; Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich, Wilhelm-Johnen Straße, 52428 Jülich, Germany., Boix V; Division of Synchrotron Radiation Research, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden., Safeer A; II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, 50937 Köln, Germany., Wekking T; II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, 50937 Köln, Germany., Vinogradov NA; MAX IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden., Preobrajenski AB; MAX IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden., Knudsen J; Division of Synchrotron Radiation Research, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.; MAX IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.; NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden., Fischer J; II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, 50937 Köln, Germany., Jolie W; II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, 50937 Köln, Germany., Michely T; II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, 50937 Köln, Germany. |
| Abstrakt: |
Two ultimately thin vanadium-rich 2D materials based on VS 2 are created via molecular beam epitaxy and investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy, and density functional theory (DFT) calculations. The controlled synthesis of stoichiometric single-layer VS 2 or either of the two vanadium-rich materials is achieved by varying the sample coverage and sulfur pressure during annealing. Through annealing of small stoichiometric single-layer VS 2 islands without S pressure, S-vacancies spontaneously order in 1D arrays, giving rise to patterned adsorption. Via the comparison of DFT calculations with scanning tunneling microscopy data, the atomic structure of the S-depleted phase, with a stoichiometry of V 4 S 7 , is determined. By depositing larger amounts of vanadium and sulfur, which are subsequently annealed in a S-rich atmosphere, self-intercalated ultimately thin V 5 S 8 -derived layers are obtained, which host 2 × 2 V-layers between sheets of VS 2 . We provide atomic models for the thinnest V 5 S 8 -derived structures. Finally, we use scanning tunneling spectroscopy to investigate the charge density wave observed in the 2D V 5 S 8 -derived islands. |
