Tailoring amorphous boron nitride for high-performance two-dimensional electronics.

Autor: Chen CY; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA., Sun Z; School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, 47907, USA., Torsi R; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA., Wang K; Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA., Kachian J; Intel Corporation, 2200 Mission College Blvd, Santa Clara, CA, 95054, USA., Liu B; Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA., Rayner GB Jr; The Kurt J. Lesker Company, 1925 PA-51, Jefferson Hills, PA, 15025, USA., Chen Z; School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, 47907, USA., Appenzeller J; School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, 47907, USA., Lin YC; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu City, 300, Taiwan. ycl194@nycu.edu.tw., Robinson JA; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA. jar403@psu.edu.; Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA. jar403@psu.edu.; Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, PA, 16802, USA. jar403@psu.edu.
Jazyk: angličtina
Zdroj: Nature communications [Nat Commun] 2024 May 13; Vol. 15 (1), pp. 4016. Date of Electronic Publication: 2024 May 13.
DOI: 10.1038/s41467-024-48429-4
Abstrakt: Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfaces to form thin, uniform dielectric layers often leads to interfacial defects that degrade the device performance, posing a major roadblock in the realization of 2D-based devices. Here, we demonstrate a wafer-scale, low-temperature process (<250 °C) using atomic layer deposition (ALD) for the synthesis of uniform, conformal amorphous boron nitride (aBN) thin films. ALD deposition temperatures between 125 and 250 °C result in stoichiometric films with high oxidative stability, yielding a dielectric strength of 8.2 MV/cm. Utilizing a seed-free ALD approach, we form uniform aBN dielectric layers on 2D surfaces and fabricate multiple quantum well structures of aBN/MoS 2 and aBN-encapsulated double-gated monolayer (ML) MoS 2 field-effect transistors to evaluate the impact of aBN dielectric environment on MoS 2 optoelectronic and electronic properties. Our work in scalable aBN dielectric integration paves a way towards realizing the theoretical performance of 2D materials for next-generation electronics.
(© 2024. The Author(s).)
Databáze: MEDLINE
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