Multilevel resistive switching in hydrothermally synthesized FeWO 4 thin film-based memristive device for non-volatile memory application.

Autor: Patil AR; Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India., Dongale TD; Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India., Pedanekar RS; Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India., Sutar SS; Yashwantrao Chavan School of Rural Development, Shivaji University, Kolhapur 416004, India., Kamat RK; Department of Electronics, Shivaji University, Kolhapur 416004, India; Dr. Homi Bhabha State University, 15, Madam Cama Road, Mumbai 400032, India., Rajpure KY; Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India. Electronic address: rajpureky@gmail.com.
Jazyk: angličtina
Zdroj: Journal of colloid and interface science [J Colloid Interface Sci] 2024 Sep; Vol. 669, pp. 444-457. Date of Electronic Publication: 2024 May 05.
DOI: 10.1016/j.jcis.2024.04.222
Abstrakt: The memristors offer significant advantages as a key element in non-volatile and brain-inspired neuromorphic systems because of their salient features such as remarkable endurance, ability to store multiple bits, fast operation speed, and extremely low energy usage. This work reports the resistive switching (RS) characteristics of the hydrothermally synthesized iron tungstate (FeWO 4 ) based thin film memristive device. The detailed physicochemical analysis was investigated using Rietveld's refinement, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM) techniques. The fabricated Ag/FWO/FTO memristive device exhibits bipolar resistive switching (BRS) behavior. In addition, the devices exhibit negative differential resistance (NDR) at both positive and negative bias. The charge-flux relation portrayed the non-ideal or memristive nature of the devices. The reliability in the RS process was analyzed in detail using Weibull distribution and time series analysis techniques. The device exhibits stable and multilevel endurance and retention characteristics which demonstrates the suitability of the device for the high-density non-volatile memory application. The current conduction of the device was dominated by Ohmic and trap controlled-space charge limited current (TC-SCLC) mechanisms and filamentary RS process responsible for the BRS in the device. In a nutshell, the present investigations reveal the potential use of the iron tungstate for the fabrication of memristive devices for the non-volatile memory application.
Competing Interests: Declaration of competing interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
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Databáze: MEDLINE
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