Benchmarking of X-Ray Fluorescence Microscopy with Ion Beam Implanted Samples Showing Detection Sensitivity of Hundreds of Atoms.

Autor: Masteghin MG; Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK., Gervais T; Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK., Clowes SK; Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK., Cox DC; Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK., Zelyk V; Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK., Pattammattel A; National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, 11973, USA., Chu YS; National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, 11973, USA., Kolev N; London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK., Stock TJZ; London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK., Curson NJ; London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK., Evans PG; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA., Stuckelberger M; Center for X-Ray and Nano Science CXNS, Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, 22607, Hamburg, Germany., Murdin BN; Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK.
Jazyk: angličtina
Zdroj: Small methods [Small Methods] 2024 Oct; Vol. 8 (10), pp. e2301610. Date of Electronic Publication: 2024 May 01.
DOI: 10.1002/smtd.202301610
Abstrakt: Single impurities in insulators are now often used for quantum sensors and single photon sources, while nanoscale semiconductor doping features are being constructed for electrical contacts in quantum technology devices, implying that new methods for sensitive, non-destructive imaging of single- or few-atom structures are needed. X-ray fluorescence (XRF) can provide nanoscale imaging with chemical specificity, and features comprising as few as 100 000 atoms have been detected without any need for specialized or destructive sample preparation. Presently, the ultimate limits of sensitivity of XRF are unknown - here, gallium dopants in silicon are investigated using a high brilliance, synchrotron source collimated to a small spot. It is demonstrated that with a single-pixel integration time of 1 s, the sensitivity is sufficient to identify a single isolated feature of only 3000 Ga impurities (a mass of just 350 zg). With increased integration (25 s), 650 impurities can be detected. The results are quantified using a calibration sample consisting of precisely controlled numbers of implanted atoms in nanometer-sized structures. The results show that such features can now be mapped quantitatively when calibration samples are used, and suggest that, in the near future, planned upgrades to XRF facilities might achieve single-atom sensitivity.
(© 2024 The Authors. Small Methods published by Wiley‐VCH GmbH.)
Databáze: MEDLINE
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