Bandgap Engineering and Enhancing Optoelectronic Performance of a Lead-Free Double Perovskite Cs 2 AgBiBr 6 Solar Cell via Al Doping.

Autor: Ullah A; Department of Physics, The University of Lahore, Lahore 53700, Pakistan., Iftikhar Khan M; Department of Physics, The University of Lahore, Lahore 53700, Pakistan., Ihtisham-Ul-Haq; Department of Physics, The University of Lahore, Lahore 53700, Pakistan., Almutairi BS; Department of Physics, College of Science, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia., N AlResheedi DB; Department of Physics, College of Science, Qassim University, Buraidah 51452, Saudi Arabia., Choi JR; School of Electronic Engineering, Kyonggi University, Suwon, Gyeonggi-do 16227, Republic of Korea.
Jazyk: angličtina
Zdroj: ACS omega [ACS Omega] 2024 Mar 21; Vol. 9 (16), pp. 18202-18211. Date of Electronic Publication: 2024 Mar 21 (Print Publication: 2024).
DOI: 10.1021/acsomega.3c10388
Abstrakt: In this study, solar cells based on pure Cs 2 AgBiBr 6 and Al-doped metal were fabricated using the sol-gel spin-coating technique. X-ray diffraction (XRD) analysis confirmed the formation of cubic-structured films for both pure and Al-doped. Notably, the grain size of Al-doped Cs 2 AgBiBr 6 was observed to be larger than that of its pure counterpart. The optical properties of these films were investigated using UV-vis spectroscopy, revealing essential parameters such as the bandgap energy ( E g ), refractive index ( n ), extinction coefficients ( k ), and dielectric constant. While the pure film exhibited an E g of 1.91 eV, the Al-doped film demonstrated a slightly lower E g of 1.82 eV. Utilization of these films in solar cell fabrication yielded intriguing results. The J - V curve shows that the pure solar cell displayed a short-circuit current density ( J sc ) of 5.01 mA/cm 2 , a fill factor (FF) of 0.67, an open-circuit voltage ( V oc ) of 0.89 V, and an efficiency of 3.02%. Al doping led to improvements, with an increase in V oc to 0.91 V, FF to 0.71, and J sc to 5.29 mA/cm 2 . Consequently, the overall efficiency surged to 3.40%, marking a substantial 12.5% enhancement compared with the pure solar cell. These findings underscore the efficacy of Al doping in enhancing the performance of Cs 2 AgBiBr 6 -based solar cells.
Competing Interests: The authors declare no competing financial interest.
(© 2024 The Authors. Published by American Chemical Society.)
Databáze: MEDLINE
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