Metal-Semiconductor Behavior along the Line of Stacking Order Change in Gated Multilayer Graphene.

Autor: Jaskólski W; Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, Grudziądzka 5, 87-100 Toruń, Poland.
Jazyk: angličtina
Zdroj: Materials (Basel, Switzerland) [Materials (Basel)] 2024 Apr 21; Vol. 17 (8). Date of Electronic Publication: 2024 Apr 21.
DOI: 10.3390/ma17081915
Abstrakt: We investigated gated multilayer graphene with stacking order changes along the armchair direction. We consider that some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the corresponding direction in the k -space, so the topological gapless states from different valleys also overlap. However, these states strongly interact and split due to atomic-scale defects caused by the broken layers, yielding an effective energy gap. We find that for some gate voltages, the gap states cross and the metallic behavior along the stacking domain wall can be restored. In particular cases, a flat band appears at the Fermi energy. We show that for small variations in the gate voltage, the charge occupying this band oscillates between the outer layers.
Databáze: MEDLINE
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