In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III-V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants.

Autor:	McMahon WE; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Braun AK; Colorado School of Mines, Golden, Colorado 80401, United States., Perna AN; Colorado School of Mines, Golden, Colorado 80401, United States., Coll PG; Crystal Sonic Inc., Phoenix, Arizona 85003, United States., Schulte KL; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Boyer JT; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Neumann AN; National Renewable Energy Laboratory, Golden, Colorado 80401, United States.; Colorado School of Mines, Golden, Colorado 80401, United States., Geisz JF; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Warren EL; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Ptak AJ; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Merkle AP; Crystal Sonic Inc., Phoenix, Arizona 85003, United States., Bertoni MI; Crystal Sonic Inc., Phoenix, Arizona 85003, United States.; Arizona State University, Tempe, Arizona 85287, United States., Packard CE; National Renewable Energy Laboratory, Golden, Colorado 80401, United States.; Colorado School of Mines, Golden, Colorado 80401, United States., Steiner MA; National Renewable Energy Laboratory, Golden, Colorado 80401, United States.
Jazyk:	angličtina
Zdroj:	Crystal growth & design [Cryst Growth Des] 2024 Apr 01; Vol. 24 (8), pp. 3218-3227. Date of Electronic Publication: 2024 Apr 01 (Print Publication: 2024).
DOI:	10.1021/acs.cgd.3c01407
Abstrakt:	One possible pathway toward reducing the cost of III-V solar cells is to remove them from their growth substrate by spalling fracture, and then reuse the substrate for the growth of multiple cells. Here we consider the growth of III-V cells on spalled GaAs(100) substrates, which typically have faceted surfaces after spalling. To facilitate the growth of high-quality cells, these faceted surfaces should be smoothed prior to cell growth. In this study, we show that these surfaces can be smoothed during organometallic vapor-phase epitaxy growth, but the choice of epilayer material and modification of the various surfaces by impurities/dopants greatly impacts whether or not the surface becomes smooth, and how rapidly the smoothing occurs. Representative examples are presented along with a discussion of the underlying growth processes. Although this work was motivated by solar cell growth, the methods are generally applicable to the growth of any III-V device on a nonplanar substrate. Competing Interests: The authors declare no competing financial interest. (© 2024 The Authors. Published by American Chemical Society.)
Databáze:	MEDLINE
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