Low-Temperature Synthesis of WSe 2 by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible Reconfigurable Neurons.

Autor:	Nibhanupudi SST; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Roy A; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States.; Department of Physics, Birla Institute of Technology Mesra, Ranchi, Jharkhand 835215, India., Chowdhury S; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Schalip R; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Coupin MJ; Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States., Matthews KC; Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States., Alam MH; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Satpati B; Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700 064, India., Movva HCP; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Luth CJ; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Wu S; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Warner JH; Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States., Banerjee SK; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States.
Jazyk:	angličtina
Zdroj:	ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 May 01; Vol. 16 (17), pp. 22326-22333. Date of Electronic Publication: 2024 Apr 18.
DOI:	10.1021/acsami.3c18446
Abstrakt:	Low-temperature large-area growth of two-dimensional (2D) transition-metal dichalcogenides (TMDs) is critical for their integration with silicon chips. Especially, if the growth temperatures can be lowered below the back-end-of-line (BEOL) processing temperatures, the Si transistors can interface with 2D devices (in the back end) to enable high-density heterogeneous circuits. Such configurations are particularly useful for neuromorphic computing applications where a dense network of neurons interacts to compute the output. In this work, we present low-temperature synthesis (400 °C) of 2D tungsten diselenide (WSe 2 ) via the selenization of the W film under ultrahigh vacuum (UHV) conditions. This simple yet effective process yields large-area, homogeneous films of 2D TMDs, as confirmed by several characterization techniques, including reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy, and different spectroscopy methods. Memristors fabricated using the grown WSe 2 film are leveraged to realize a novel compact neuron circuit that can be reconfigured to enable homeostasis.
Databáze:	MEDLINE
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