Demonstration of 10 nm Ferroelectric Al 0.7 Sc 0.3 N-Based Capacitors for Enabling Selector-Free Memory Array.

Autor: Chen L; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore., Liu C; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore., Lee HK; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore., Varghese B; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore., Ip RWF; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore., Li M; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore., Quek ZJ; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore., Hong Y; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore., Wang W; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore., Song W; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore., Lin H; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore., Zhu Y; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore.
Jazyk: angličtina
Zdroj: Materials (Basel, Switzerland) [Materials (Basel)] 2024 Jan 27; Vol. 17 (3). Date of Electronic Publication: 2024 Jan 27.
DOI: 10.3390/ma17030627
Abstrakt: In this work, 10 nm scandium-doped aluminum nitride (AlScN) capacitors are demonstrated for the construction of the selector-free memory array application. The 10 nm Al 0.7 Sc 0.3 N film deposited on an 8-inch silicon wafer with sputtering technology exhibits a large remnant polarization exceeding 100 µC/cm 2 and a tight distribution of the coercive field, which is characterized by the positive-up-negative-down (PUND) method. As a result, the devices with lateral dimension of only 1.5 μm show a large memory window of over 250% and a low power consumption of ~40 pJ while maintaining a low disturbance rate of <2%. Additionally, the devices demonstrate stable multistate memory characteristics with a dedicated operation scheme. The back-end-of-line (BEOL)-compatible fabrication process, along with all these device performances, shows the potential of AlScN-based capacitors for the implementation of the high-density selector-free memory array.
Databáze: MEDLINE
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