| Autor: |
Jamwal NS; Silicon Hall: Micro/Nano Manufacturing Facility, Faculty of Engineering and Applied Science, Ontario Tech University, 2000 Simcoe St N, Oshawa, ON L1G 0C5, Canada.; Department of Mechanical and Manufacturing Engineering (MME), Ontario Tech University, 2000 Simcoe St N, Oshawa, ON L1G 0C5, Canada., Kiani A; Silicon Hall: Micro/Nano Manufacturing Facility, Faculty of Engineering and Applied Science, Ontario Tech University, 2000 Simcoe St N, Oshawa, ON L1G 0C5, Canada.; Department of Mechanical and Manufacturing Engineering (MME), Ontario Tech University, 2000 Simcoe St N, Oshawa, ON L1G 0C5, Canada. |
| Abstrakt: |
Gallium oxide (Ga 2 O 3 ) is a promising material for high-power semiconductor applications due to its wide band gap and high breakdown voltage. However, the current methods for fabricating Ga 2 O 3 nanostructures have several disadvantages, including their complex manufacturing processes and high costs. In this study, we report a novel approach for synthesizing β-Ga 2 O 3 nanostructures on gallium phosphide (GaP) using ultra-short laser pulses for in situ nanostructure generation (ULPING). We varied the process parameters to optimize the nanostructure formation, finding that the ULPING method produces high-quality β-Ga 2 O 3 nanostructures with a simpler and more cost-effective process when compared with existing methods. Scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX) were used to characterize the samples, which indicated the presence of phosphorous. X-ray photoelectron spectroscopy (XPS) confirmed the formation of gallium oxide, along with a minor amount of phosphorus-containing compounds. Structural analysis using X-ray diffraction (XRD) revealed the formation of a monoclinic β-polymorph of Ga 2 O 3 . We also measured the band gap of the materials using reflection electron energy loss spectroscopy (REELS), and found that the band gap increased with higher nanostructure formation, reaching 6.2 eV for the optimized sample. Furthermore, we observed a change in the heterojunction alignment, which we attribute to the change in the oxidation of the samples. Our results demonstrate the potential of ULPING as a novel, simple, and cost-effective method for fabricating Ga 2 O 3 nanostructures with tunable optical properties. The ULPING method offers a green alternative to existing fabrication methods, making it a promising technology for future research in the field of Ga 2 O 3 nanostructure fabrication. |
