Nanocavity-Mediated Purcell Enhancement of Er in TiO 2 Thin Films Grown via Atomic Layer Deposition.

Autor:	Ji C; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Solomon MT; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States.; Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States., Grant GD; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Tanaka K; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States., Hua M; Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States., Wen J; Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States., Seth SK; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Horn CP; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Masiulionis I; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Singh MK; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States., Sullivan SE; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States.; Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States., Heremans FJ; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States.; Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States., Awschalom DD; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States.; Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States.; Department of Physics, University of Chicago, Chicago, Illinois 60637, United States., Guha S; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States.; Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States., Dibos AM; Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States.; Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States.; Nanoscience and Technology Division, Argonne National Laboratory, Lemont, Illinois 60439, United States.
Jazyk:	angličtina
Zdroj:	ACS nano [ACS Nano] 2024 Apr 09; Vol. 18 (14), pp. 9929-9941. Date of Electronic Publication: 2024 Mar 27.
DOI:	10.1021/acsnano.3c09878
Abstrakt:	The use of trivalent erbium (Er 3+ ), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunication devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface make it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO 2 ) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping controls over the Er concentration. Even though the as-grown films are amorphous after oxygen annealing, they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO 2 . Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (≈300) of their optical lifetime. Our findings demonstrate a low-temperature, nondestructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high doping densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.
Databáze:	MEDLINE
Externí odkaz:	Zobrazit plný text záznamu