Selective leaching of indium from spent LCD screens by siderophore desferrioxamine E.

Autor: Zheng K; Université Paris Cité, Institut de Physique du Globe de Paris, CNRS, F-75005 Paris, France., Benedetti MF; Université Paris Cité, Institut de Physique du Globe de Paris, CNRS, F-75005 Paris, France., Jain R; Helmholtz-Zentrum Dresden-Rossendorf, Helmholtz Institute Freiberg for Resource Technology, Biotechnology department, Bautzner Landstrasse 400, 01328, Dresden, Germany., Guy BM; Helmholtz-Zentrum Dresden-Rossendorf, Helmholtz Institute Freiberg for Resource Technology, Chemnitzer Str. 40, 09599 Freiberg, Germany., Pollmann K; Helmholtz-Zentrum Dresden-Rossendorf, Helmholtz Institute Freiberg for Resource Technology, Biotechnology department, Bautzner Landstrasse 400, 01328, Dresden, Germany., van Hullebusch ED; Université Paris Cité, Institut de Physique du Globe de Paris, CNRS, F-75005 Paris, France. Electronic address: vanhullebusch@ipgp.fr.
Jazyk: angličtina
Zdroj: Journal of hazardous materials [J Hazard Mater] 2024 May 05; Vol. 469, pp. 134013. Date of Electronic Publication: 2024 Mar 12.
DOI: 10.1016/j.jhazmat.2024.134013
Abstrakt: Given the criticality of indium (In) in high-tech applications, spent LCD screens can represent a viable secondary In resource. In this work, an innovative and alternative technology to selectively leach In from spent LCD screens using a microbial chelating agent, desferrioxamine E (DFOE), was developed. Indium was concentrated from spent LCD screens by implementing an adapted pre-treatment procedure, allowing the isolation of an indium-rich glassy fraction. During leaching, the competition between aluminum (Al) and In for complexation with DFOE leads to the precipitation of In(OH) 3 at low DFOE concentrations (12-240 µM). After adjusting the optimal conditions (fraction size: 0-36 μM, pH: 5.5, S/L ratio: 1 g/L, 25 °C), the In leaching yield reached 32%, ten times higher than Al over 90 days with 5 mM DFOE. Thus, achieving high In recovery is possible through i) prolonging leaching durations, ii) selective leaching, and iii) minimizing Al interference. This is the first attempt to selectively leach In using a selected siderophore from end-of-life products with high concentrations of non-targeted elements (i.e. Al, Si, and Ca). This study demonstrates the potential of generating indium-rich leachates, which can be subsequently processed through the GaLIophore technology for In refining.
Competing Interests: Declaration of Competing Interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
(Copyright © 2024 The Authors. Published by Elsevier B.V. All rights reserved.)
Databáze: MEDLINE
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