All-electrical skyrmionic magnetic tunnel junction.

Autor: Chen S; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Lourembam J; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Ho P; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Toh AKJ; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Huang J; Department of Physics, National University of Singapore, Singapore, Singapore., Chen X; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Tan HK; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Yap SLK; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Lim RJJ; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Tan HR; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Suraj TS; Department of Physics, National University of Singapore, Singapore, Singapore., Sim MI; Department of Physics, National University of Singapore, Singapore, Singapore., Toh YT; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Lim I; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Lim NCB; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Zhou J; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Chung HJ; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Lim ST; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore., Soumyanarayanan A; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore. anjan@imre.a-star.edu.sg.; Department of Physics, National University of Singapore, Singapore, Singapore. anjan@imre.a-star.edu.sg.
Jazyk: angličtina
Zdroj: Nature [Nature] 2024 Mar; Vol. 627 (8004), pp. 522-527. Date of Electronic Publication: 2024 Mar 20.
DOI: 10.1038/s41586-024-07131-7
Abstrakt: Topological whirls or 'textures' of spins such as magnetic skyrmions represent the smallest realizable emergent magnetic entities 1-5 . They hold considerable promise as robust, nanometre-scale, mobile bits for sustainable computing 6-8 . A longstanding roadblock to unleashing their potential is the absence of a device enabling deterministic electrical readout of individual spin textures 9,10 . Here we present the wafer-scale realization of a nanoscale chiral magnetic tunnel junction (MTJ) hosting a single, ambient skyrmion. Using a suite of electrical and multimodal imaging techniques, we show that the MTJ nucleates skyrmions of fixed polarity, whose large readout signal-20-70% relative to uniformly magnetized states-corresponds directly to skyrmion size. The MTJ exploits complementary nucleation mechanisms to stabilize distinctly sized skyrmions at zero field, thereby realizing three non-volatile electrical states. Crucially, it can electrically write and delete skyrmions to both uniform states with switching energies 1,000 times lower than the state of the art. Here, the applied voltage emulates a magnetic field and, in contrast to conventional MTJs, it reshapes both the energetics and kinetics of the switching transition, enabling deterministic bidirectional switching. Our stack platform enables large readout and efficient switching, and is compatible with lateral manipulation of skyrmionic bits, providing the much-anticipated backbone for all-electrical skyrmionic device architectures 9,10 . Its wafer-scale realizability provides a springboard to harness chiral spin textures for multibit memory and unconventional computing 8,11 .
(© 2024. The Author(s), under exclusive licence to Springer Nature Limited.)
Databáze: MEDLINE
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