Boosting Thermoelectric Performance of PbBi 2 Te 4 via Reduced Carrier Scattering and Intensified Phonon Scattering.

Autor: Yao G; Institutes of physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China.; Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China., Chen Y; Institutes of physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China.; Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China., Wang S; Institutes of physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China.; Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China., Chen T; Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China.; University of Science and Technology of China, Hefei, 230026, P. R. China., Li S; Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China.; University of Science and Technology of China, Hefei, 230026, P. R. China., Song C; Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China., Li D; Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China., Zhang J; Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China., Qin X; Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China., Xin H; Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China.
Jazyk: angličtina
Zdroj: Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Aug; Vol. 20 (32), pp. e2400449. Date of Electronic Publication: 2024 Mar 15.
DOI: 10.1002/smll.202400449
Abstrakt: Materials with low intrinsic lattice thermal conductivity are crucial in the pursuit of high-performance thermoelectric (TE) materials. Here, the TE properties of PbBi 2 Te 4-x Se x (0 ≤ x ≤ 0.6) samples are systematically investigated for the first time. Doping with Se in PbBi 2 Te 4 can simultaneously reduce carrier concentration and increase carrier mobility. The Seebeck coefficient is significantly increased by doping with Se, based on the density functional theory calculation, it is shown to be due to the increased bandgap and electronic density of states. In addition, the lattice strain is enhanced due to the difference in the size of Se and Te atoms, and the multidimensional defects formed by Se doping, such as vacancies, dislocations, and grain boundaries, enhance the phonon scattering and reduce the lattice thermal conductivity by about 37%. Finally, by using Se doping to reduce carrier concentration and thermal conductivity, a large ZT max = 0.56 (at 574K) is achieved for PbBi 2 Te 3.5 Se 0.5 , which is around 64% larger than those of the PbBi 2 Te 4 pristine sample. This work not only demonstrates that PbBi 2 Te 4 is a potential medium temperature thermoelectric material, but also provides a reference for enhancing thermoelectric properties through defect and energy band engineering.
(© 2024 Wiley‐VCH GmbH.)
Databáze: MEDLINE
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