VO 2 Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation.

Autor:	Wang D; College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, China., Gao C; College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, China., Wang Y; Key Lab of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China., Chang X; College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, China.; Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China., Hu Y; College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, China., Li J; Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China., Feng T; College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, China., Dey JK; Materials Research Centre, Indian Institute of Science, Bangalore 560012, India., Roul B; Materials Research Centre, Indian Institute of Science, Bangalore 560012, India.; Central Research Laboratory, Bharat Electronics Limited, Bangalore 560013, India., Lu X; College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, China., Du L; Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China., Zhai Z; Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China., Zhu H; College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, China.; Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China., Huang W; College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, China., Das S; Materials Research Centre, Indian Institute of Science, Bangalore 560012, India., Su F; Key Lab of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China., Zhu LG; Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China., Shi Q; College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, China.
Jazyk:	angličtina
Zdroj:	ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Feb 28; Vol. 16 (8), pp. 10886-10896. Date of Electronic Publication: 2024 Feb 20.
DOI:	10.1021/acsami.3c16252
Abstrakt:	VO 2 , which exhibits semiconductor-metal phase transition characteristics occurring on a picosecond time scale, holds great promise for ultrafast terahertz modulation in next-generation communication. However, as of now, there is no reported prototype for an ultrafast device. The temperature effect has been proposed as one of the major obstacles. Consequently, reducing the excitation threshold for the phase transition would be highly significant. The traditional strategy typically involves chemical doping, but this approach often leads to a decrease in phase transition amplitude and a slower transition speed. In this work, we proposed a design featuring a highly conductive MXene interfacial layer between the VO 2 film and the substrate. We demonstrate a significant reduction in the phase transition threshold for both temperature and laser-induced phase transition by adjusting the conductivity of the MXene layers with varying thicknesses. Our observations show that the phase transition temperature can be decreased by 9 °C, while the pump fluence for laser excitation can be reduced by as high as 36%. The ultrafast phase transition process on a picosecond scale, as revealed by the optical-pump terahertz-probe method, suggests that the MXene layers have minimal impact on the phase transition speed. Moreover, the reduced phase transition threshold can remarkably alleviate the photothermal effect and inhibit temperature rise and diffusion in VO 2 triggered by laser. This study offers a blueprint for designing VO 2 /MXene hybrid films with reduced phase transition thresholds. It holds significant potential for the development of low-power, intelligent optical and electrical devices including, but not limited to, terahertz modulators based on phase transition phenomena.
Databáze:	MEDLINE
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