| Autor: |
Xu SZ; State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China.; Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China., Song YP; Key Laboratory of Solid State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, P. R. China., Yao B; State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China.; Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China., Li MG; State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China.; Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China., Ding ZH; State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China.; Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China., Deng R; School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, P. R. China., Liang HN; State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China.; Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China., Du XB; State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China.; Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China., Li YF; State Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, P. R. China.; Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China. |
| Abstrakt: |
A Mo(S,Se) 2 interfacial layer is formed inevitably and uncontrollably between the Mo electrode and Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorber during the selenization process, which significantly influences the performance of CZTSSe solar cells. In this work, an ultrathin MoS 2 layer is intentionally inserted into Mo/CZTSSe to reduce the recombination and thus optimize the interface quality. It is revealed that the absorber exhibits a continuous and compact morphology with bigger grains and remarkably without pinholes across the surface or cross-sectional regions after MoS 2 modification. Benefitting from this, the shunt resistance ( R Sh ) of the device increased evidently from ∼395 to ∼634 Ω·cm 2 , and simultaneously, the reverse saturation current density ( J 0 ) realized an effective depression. As a result, the power conversion efficiency (PCE) of the MoS 2 -modified device reaches 9.64% via the optimization of the thickness of the MoS 2 layer, indicating performance improvements with respect to the MoS 2 -free case. Furthermore, the main contribution to the performance improvement is derived and analyzed in detail from the increased R Sh , decreased J 0 , and diode ideality factor. Our results suggest that the Mo/CZTSSe interface quality and performance of CZTSSe solar cells can be modulated and improved by appropriately designing and optimizing the thickness of the inserted MoS 2 layer. |
