| Autor: |
Jeong H; Laboratoire Lumière, nanomatériaux et nanotechnologie, CNRS UMR 7076, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France.; Department of Physics, Hanyang University, Seoul 04763, Republic of Korea., Nomenyo K; Laboratoire Lumière, nanomatériaux et nanotechnologie, CNRS UMR 7076, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France.; Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea.; Département de Génie Electrique, Ecole Nationale Supérieure d'Ingénieurs (ENSI), Université de Lomé, BP 1515 Lomé, Togo., Oh HM; Department of Physics, Kunsan National University, Kunsan, 54150, Republic of Korea., Gwiazda A; Laboratoire Lumière, nanomatériaux et nanotechnologie, CNRS UMR 7076, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France., Yun SJ; Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea.; Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 16419, Republic of Korea., Chevalier César C; Laboratoire Lumière, nanomatériaux et nanotechnologie, CNRS UMR 7076, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France., Salas-Montiel R; Laboratoire Lumière, nanomatériaux et nanotechnologie, CNRS UMR 7076, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France., Wourè-Nadiri Bayor S; Département de Génie Electrique, Ecole Nationale Supérieure d'Ingénieurs (ENSI), Université de Lomé, BP 1515 Lomé, Togo., Jeong MS; Department of Physics, Hanyang University, Seoul 04763, Republic of Korea., Lee YH; Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea.; Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 16419, Republic of Korea., Lérondel G; Laboratoire Lumière, nanomatériaux et nanotechnologie, CNRS UMR 7076, Université de Technologie de Troyes, BP 2060, 10010 Troyes, France.; Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea. |
| Abstrakt: |
Two-dimensional transition-metal dichalcogenides have attracted significant attention because of their unique intrinsic properties, such as high transparency, good flexibility, atomically thin structure, and predictable electron transport. However, the current state of device performance in monolayer transition-metal dichalcogenide-based optoelectronics is far from commercialization, because of its substantial strain on the heterogeneous planar substrate and its robust metal deposition, which causes crystalline damage. In this study, we show that strain-relaxed and undamaged monolayer WSe 2 can improve a device performance significantly. We propose here an original point-cell-type photodetector. The device consists in a monolayer of an absorbing TMD (i.e., WSe 2 ) simply deposited on a structured electrode, i.e., core-shell silicon-gold nanopillars. The maximum photoresponsivity of the device is found to be 23.16 A/W, which is a significantly high value for monolayer WSe 2 -based photodetectors. Such point-cell photodetectors can resolve the critical issues of 2D materials, leading to tremendous improvements in device performance. |
