Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation.

Autor:	Zhu J; School of Microelectronics, Fudan University, Shanghai 200433, China., Hu S; School of Microelectronics, Fudan University, Shanghai 200433, China.; Jiashan Fudan Institute, Jiashan 314100, China., Chen B; School of Microelectronics, Fudan University, Shanghai 200433, China., Wei S; School of Microelectronics, Fudan University, Shanghai 200433, China., Zhang Y; School of Microelectronics, Fudan University, Shanghai 200433, China., Wu X; Shanghai Integrated Circuit Manufacturing Innovation Center Co., Ltd., Shanghai 201203, China., Zou X; State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of Advanced Ferrometallurgy, and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China., Lu X; State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of Advanced Ferrometallurgy, and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China., Sun Q; School of Microelectronics, Fudan University, Shanghai 200433, China., Zhang DW; School of Microelectronics, Fudan University, Shanghai 200433, China., Ji L; School of Microelectronics, Fudan University, Shanghai 200433, China.; Jiashan Fudan Institute, Jiashan 314100, China.; Hubei Yangtz Memory Laboratories, Wuhan 430205, China.
Jazyk:	angličtina
Zdroj:	The Journal of chemical physics [J Chem Phys] 2024 Jan 28; Vol. 160 (4).
DOI:	10.1063/5.0188101
Abstrakt:	Due to the limitation of inherent ultra-high electron concentration, the electrical properties of In2O3 resemble those of conductors rather than semiconductors prior to special treatment. In this study, the effect of various annealing treatments on the microstructure, optical properties, and oxygen vacancies of the films and transistors is systematically investigated. Our finding reveals a progressive crystallization trend in the films with increasing annealing temperature. In addition, a higher annealing temperature is also associated with the reduction in the concentration of oxygen vacancies, as well as an elevation in both optical transmittance and optical bandgap. Furthermore, with the implementation of annealing process, the devices gradually transform from no pronounced gate control to exhibit with excellent gate control and electrical performances. The atomic layer deposited Hf-doped In2O3 thin film transistor annealed at 250 °C exhibits optimal electrical properties, with a field-effect mobility of 18.65 cm2 V-1 s-1, a subthreshold swing of 0.18 V/dec, and an Ion/Ioff ratio of 2.76 × 106. The results indicate that the impact of varying annealing temperatures can be attributed to the modulation of oxygen vacancies within the films. This work serves as a complementary study for the existing post-treatment of oxide films and provides a reliable reference for utilization of the annealing process in practical applications. (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)
Databáze:	MEDLINE
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