Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO 2 at CF 4 /H 2 /Ar Plasma.

Autor:	Kwon HT; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea., Bang IY; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea., Kim JH; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea., Kim HJ; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea., Lim SY; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea., Kim SY; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea., Cho SH; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea., Kim JH; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea., Kim WJ; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea., Shin GW; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea., Kwon GC; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea.
Jazyk:	angličtina
Zdroj:	Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2024 Jan 17; Vol. 14 (2). Date of Electronic Publication: 2024 Jan 17.
DOI:	10.3390/nano14020209
Abstrakt:	This study investigated the effect of temperature on the aspect-ratio etching of SiO 2 in CF 4 /H 2 /Ar plasma using patterned samples of a 200 nm trench in a low-temperature reactive-ion etching system. Lower temperatures resulted in higher etch rates and aspect ratios for SiO 2 . However, the plasma property was constant with the chuck temperature, indicated by the line intensity ratio from optical emission spectroscopy monitoring of the plasma. The variables obtained from the characterization of the etched profile for the 200 nm trench after etching were analyzed as a function of temperature. A reduction in the necking ratio affected the etch rate and aspect ratio of SiO 2 . The etching mechanism of the aspect ratio etching of SiO 2 was discussed based on the results of the surface composition at necking via energy-dispersive X-ray spectroscopy with temperature. The results suggested that the neutral species reaching the etch front of SiO 2 had a low sticking coefficient. The bowing ratio decreased with lowering temperature, indicating the presence of directional ions during etching. Therefore, a lower temperature for the aspect ratio etching of SiO 2 could achieve a faster etch rate and a higher aspect ratio of SiO 2 via the reduction of necking than higher temperatures.
Databáze:	MEDLINE
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