Electron Irradiation-Induced Degradation of TiN Thin Films on Quartz and Sapphire Substrates.

Autor:	Akhtanova G; Department of Physics, Nazarbayev University, Astana 010000, Kazakhstan., Yerlanuly Y; Al-Farabi Kazakh National University, Almaty 050040, Kazakhstan.; Kazakh-British Technical University, Almaty 050000, Kazakhstan., Parkhomenko HP; Department of Physics, Nazarbayev University, Astana 010000, Kazakhstan., Solovan MV; Faculty of Physics, Adam Mickiewicz University, Poznan 61-614, Poland., Mostovyi AI; Department of Physics, Nazarbayev University, Astana 010000, Kazakhstan.; Department of Electronics and Energy Engineering, Yuriy Fedkovych Chernivtsi National University, Chernivtsi 58012, Ukraine., Nurmukhanbetova AK; Energetic Cosmos Laboratory, Nazarbayev University, Astana 010000, Kazakhstan., Kireyev AV; Institute of Nuclear Physics, Almaty 050032, Kazakhstan., Danko IV; Institute of Nuclear Physics, Almaty 050032, Kazakhstan., Oreshkin PA; Institute of Nuclear Physics, Almaty 050032, Kazakhstan., Zholdybayev TK; Institute of Nuclear Physics, Almaty 050032, Kazakhstan.; Al-Farabi Kazakh National University, Almaty 050040, Kazakhstan., Janseitov DM; Institute of Nuclear Physics, Almaty 050032, Kazakhstan.; Al-Farabi Kazakh National University, Almaty 050040, Kazakhstan., Ramazanov TS; Al-Farabi Kazakh National University, Almaty 050040, Kazakhstan., Brus VV; Department of Physics, Nazarbayev University, Astana 010000, Kazakhstan.
Jazyk:	angličtina
Zdroj:	ACS omega [ACS Omega] 2023 Dec 22; Vol. 9 (1), pp. 925-933. Date of Electronic Publication: 2023 Dec 22 (Print Publication: 2024).
DOI:	10.1021/acsomega.3c07053
Abstrakt:	In this contribution, we investigated the properties of magnetron-sputtered TiN thin films on sapphire and quartz substrates before and after 5 MeV electron irradiation with a fluence of 7 × 10 13 e/cm 2 . Structural, morphological, optical, and electrical properties were analyzed to observe the impact of electron irradiation on the TiN thin films. The results showed improved electrical properties of the TiN thin films due to high-energy electron irradiation, resulting in increased specific conductivity compared to the as-deposited thin films on both sapphire and quartz substrates. The structural features of the TiN thin films on the sapphire substrate transformed from polycrystalline to amorphous, while the TiN thin films deposited on the quartz substrate remained unchanged. Chemical state analysis indicated changes in the metallic bonding between Ti and N in the deposited TiN on the sapphire substrate, while TiN deposited on the quartz substrate retained its Ti-N bonding. This study provides insights into the effects of electron irradiation on TiN thin films, emphasizing the importance of investigating radiation resistance for the reliable operation of optoelectronic devices and photovoltaic systems in extreme ionizing radiation environments. Competing Interests: The authors declare no competing financial interest. (© 2023 The Authors. Published by American Chemical Society.)
Databáze:	MEDLINE
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