Magnetocapacitance at the Ni/BiInO 3 Schottky Interface.

Autor: Viswan G; Department of Physics and Astronomy, University of Nebraska-Lincoln, Jorgensen Hall, 855 North 16th Street, Lincoln, Nebraska 68588-0299, United States., Wang K; Department of Physics and Astronomy, University of Nebraska-Lincoln, Jorgensen Hall, 855 North 16th Street, Lincoln, Nebraska 68588-0299, United States., Streubel R; Department of Physics and Astronomy, University of Nebraska-Lincoln, Jorgensen Hall, 855 North 16th Street, Lincoln, Nebraska 68588-0299, United States., Hong X; Department of Physics and Astronomy, University of Nebraska-Lincoln, Jorgensen Hall, 855 North 16th Street, Lincoln, Nebraska 68588-0299, United States., Valanoor N; School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia., Sando D; School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia.; School of Physical and Chemical Sciences, Te Kura Matu̅ University of Canterbury, Christchurch 8140, New Zealand., Dowben PA; Department of Physics and Astronomy, University of Nebraska-Lincoln, Jorgensen Hall, 855 North 16th Street, Lincoln, Nebraska 68588-0299, United States.
Jazyk: angličtina
Zdroj: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Jan 24; Vol. 16 (3), pp. 4108-4116. Date of Electronic Publication: 2024 Jan 09.
DOI: 10.1021/acsami.3c13478
Abstrakt: We report the observation of a magnetocapacitance effect at the interface between Ni and epitaxial nonpolar BiInO 3 thin films at room temperature. A detailed surface study using X-ray photoelectron spectroscopy (XPS) reveals the formation of an intermetallic Ni-Bi alloy at the Ni/BiInO 3 interface and a shift in the Bi 4f and In 3d core levels to higher binding energies with increasing Ni thickness. The latter infers band bending in BiInO 3 , corresponding to the formation of a p-type Schottky barrier. The current-voltage characteristics of the Ni/BiInO 3 /(Ba,Sr)RuO 3 /NdScO 3 (110) heterostructure show a significant dependence on the applied magnetic field and voltage cycling, which can be attributed to voltage-controlled band bending and spin-polarized charge accumulation in the vicinity of the Ni/BiInO 3 interface. The magnetocapacitance effect can be realized at room temperature without involving multiferroic materials.
Databáze: MEDLINE