| Autor: |
Zhao Y; Université Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)-UMR6226, F-35000 Rennes, France., Descamps J; University of Bordeaux, Bordeaux INP, ISM, UMR CNRS 5255, 33607 Pessac, France., Sojic N; University of Bordeaux, Bordeaux INP, ISM, UMR CNRS 5255, 33607 Pessac, France., Loget G; Université Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)-UMR6226, F-35000 Rennes, France.; Institute of Energy and Climate Research, Fundamental Electrochemistry (IEK-9), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany. |
| Abstrakt: |
Pt/InGa/ n -Si/SiO x /Pt devices were prepared by using standard chemical and sputtering processes. These systems are diodes comprising a frontside photoactive metal-insulator-semiconductor (MIS) n -Si/SiO x /Pt junction and a backside Pt/InGa/ n -Si Ohmic contact. Pt/InGa/ n -Si/SiO x /Pt was first characterized by dark-solid-state electrical and impedance measurements. Then, each side of the device was investigated by electrochemical means in the dark and under near-IR illumination at 850 nm in the luminol-H 2 O 2 electrochemiluminescence (ECL) electrolyte. The results suggested the possibility of triggering an all-optical ECL (AO-ECL) at Pt/InGa/ n -Si/SiO x /Pt. This was confirmed by studying AO-ECL at the monolithic, all-integrated Pt/InGa/ n -Si/SiO x /Pt device, immersed in the ECL electrolyte. The conversion process can occur with good stability and the intensity of the visible emission (440 nm) depends on tunable parameters such as the illumination power density, O 2 concentration, or the concentration of added H 2 O 2 . These results are important for the next developments of AO-ECL in sensing and microscopy. |
