| Autor: |
Kumar P; Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.; Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.; Inter-university Microelectronics Center (IMEC), Leuven 3001, Belgium., Chen J; Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States., Meng AC; Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.; Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States., Yang WD; National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Anantharaman SB; Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.; Low-dimensional Semiconductors Lab, Metallurgical and Materials Engineering, Indian Institute of Technology-Madras, Chennai, Tamilnadu 600036, India., Horwath JP; Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.; Argonne National Laboratory, Lemont, Illinois 60439, United States., Idrobo JC; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States.; Materials Science & Engineering, University of Washington, Seattle, Washington 98195, United States., Mishra H; Department of Mechanical Engineering and Texas Materials Institute, University of Texas, Austin, Texas 78712, United States., Liu Y; Department of Mechanical Engineering and Texas Materials Institute, University of Texas, Austin, Texas 78712, United States., Davydov AV; National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Stach EA; Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States., Jariwala D; Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States. |
| Abstrakt: |
Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), have the potential to revolutionize the field of electronics and photonics due to their unique physical and structural properties. This research presents a novel method for synthesizing crystalline TMDCs crystals with <10 nm size using ultrafast migration of vacancies at elevated temperatures. Through in situ and ex situ processing and using atomic-level characterization techniques, we analyzed the shape, size, crystallinity, composition, and strain distribution of these nanocrystals. These nanocrystals exhibit electronic structure signatures that differ from the 2D bulk: i.e., uniform mono- and multilayers. Further, our in situ , vacuum-based synthesis technique allows observation and comparison of defect and phase evolution in these crystals formed under van der Waals heterostructure confinement versus unconfined conditions. Overall, this research demonstrates a solid-state route to synthesizing uniform nanocrystals of TMDCs and lays the foundation for materials science in confined 2D spaces under extreme conditions. |
