| Autor: |
Huwayz MA; Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University (PNU), Riyadh, 11671, Saudi Arabia.; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK., Jameel DA; Department of General Sciences, College of Basic Education, University of Zakho, Zakho, Kurdistan Region Iraq, Iraq. dler.jameel@uoz.edu.krd., de Azevedo WM; Departamento de Química Fundamental, Universidade Federal de Pernambuco (UFPE), 50740-560, Recife/PE, Brazil., Felix JF; Institute of Physics, NFA, University of Brasília (UnB), Brasília, DF, 70910-900, Brazil., Saqri NA; Department of Physics, College of Science, Sultan Qaboos University, Box 36, Al Khoud 123, Oman., Lemine OM; Department of Physics, College of Sciences, Imam Mohammad Ibn Saud Islamic University (IMISU), Riyadh 11623, Saudi Arabia., Alrub SA; Department of Physics, College of Sciences, Imam Mohammad Ibn Saud Islamic University (IMISU), Riyadh 11623, Saudi Arabia., Henini M; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK. |
| Abstrakt: |
This study investigates the impact of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on both GaAs (Sample A) and Si (Sample B) substrates using molecular beam epitaxy. The research explores the electrical characteristics of the lasers before and after being exposed to gamma radiation employing current-voltage ( I - V ), capacitance-voltage ( C - V ), deep level transient spectroscopy (DLTS) and Laplace DLTS techniques. The results show that the electrical properties of the lasers change due to gamma radiation exposure, and the extent of the change depends on the substrate used for growth. The I - V results revealed that the ideality factor ( n ) and built-in voltage were increased in Sample A and Sample B after radiation. Nonetheless, the series resistance ( R s ) at room temperature decreased in both samples after radiation. Overall, this study provides valuable insights into the effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot lasers and highlights the importance of considering substrate materials in the design of radiation-hardened electronic devices. |
