Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy.

Autor:	Roberts DM; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Kim H; Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., McClure EL; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Lu K; Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Mangum JS; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Braun AK; Colorado School of Mines, Golden, Colorado 80401, United States., Ptak AJ; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Schulte KL; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Kim J; Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Simon J; National Renewable Energy Laboratory, Golden, Colorado 80401, United States.
Jazyk:	angličtina
Zdroj:	ACS omega [ACS Omega] 2023 Nov 15; Vol. 8 (47), pp. 45088-45095. Date of Electronic Publication: 2023 Nov 15 (Print Publication: 2023).
DOI:	10.1021/acsomega.3c07162
Abstrakt:	We couple halide vapor phase epitaxy (HVPE) growth of III-V materials with liftoff from an ultrathin carbon release layer to address two significant cost components in III-V device - epitaxial growth and substrate reusability. We investigate nucleation and growth of GaAs layers by HVPE on a thin amorphous carbon layer that can be mechanically exfoliated, leaving the substrate available for reuse. We study nucleation as a function of carbon layer thickness and growth rate and find island-like nucleation. We then study various GaAs growth conditions, including V/III ratio, growth temperature, and growth rate in an effort to minimize film roughness. High growth rates and thicker films lead to drastically smoother surfaces with reduced threading dislocation density. Finally, we grow an initial photovoltaic device on a carbon release layer that has an efficiency of 7.2%. The findings of this work show that HVPE growth is compatible with a carbon release layer and presents a path toward lowering the cost of photovoltaics with high throughput growth and substrate reuse. Competing Interests: The authors declare no competing financial interest. (© 2023 The Authors. Published by American Chemical Society.)
Databáze:	MEDLINE
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