Ultrafast Infrared Laser Crystallization of Amorphous Ge Films on Glass Substrates.

Autor:	Cheng Y; Physics Department, Novosibirsk State University, Pirogova Street, 2, Novosibirsk 630090, Russia., Bulgakov AV; HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech Republic., Bulgakova NM; HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech Republic., Beránek J; HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech Republic.; Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Trojanova 13, 12001 Prague, Czech Republic., Zukerstein M; HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech Republic., Milekhin IA; Physics Department, Novosibirsk State University, Pirogova Street, 2, Novosibirsk 630090, Russia.; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Lavrentiev Ave, 13, Novosibirsk 630090, Russia., Popov AA; Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences, Yaroslavl 150007, Russia., Volodin VA; Physics Department, Novosibirsk State University, Pirogova Street, 2, Novosibirsk 630090, Russia.; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Lavrentiev Ave, 13, Novosibirsk 630090, Russia.
Jazyk:	angličtina
Zdroj:	Micromachines [Micromachines (Basel)] 2023 Oct 31; Vol. 14 (11). Date of Electronic Publication: 2023 Oct 31.
DOI:	10.3390/mi14112048
Abstrakt:	Amorphous germanium films on nonrefractory glass substrates were annealed by ultrashort near-infrared (1030 nm, 1.4 ps) and mid-infrared (1500 nm, 70 fs) laser pulses. Crystallization of germanium irradiated at a laser energy density (fluence) range from 25 to 400 mJ/cm 2 under single-shot and multishot conditions was investigated using Raman spectroscopy. The dependence of the fraction of the crystalline phase on the fluence was obtained for picosecond and femtosecond laser annealing. The regimes of almost complete crystallization of germanium films over the entire thickness were obtained (from the analysis of Raman spectra with excitation of 785 nm laser). The possibility of scanning laser processing is shown, which can be used to create films of micro- and nanocrystalline germanium on flexible substrates.
Databáze:	MEDLINE
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