A modelling study of hole transport in GaN/AlGaN superlattices.

Autor: Bai M; Department of Electrical and Electronic Engineering, University of Bristol, Bristol, BS8 1UB, UK. mb18200@bristol.ac.uk., Rorison J; Department of Electrical and Electronic Engineering, University of Bristol, Bristol, BS8 1UB, UK.
Jazyk: angličtina
Zdroj: Scientific reports [Sci Rep] 2023 Nov 16; Vol. 13 (1), pp. 20053. Date of Electronic Publication: 2023 Nov 16.
DOI: 10.1038/s41598-023-47345-9
Abstrakt: The transport of holes through p-doped wurtzite bulk GaN and AlGaN is poor so transport of holes through GaN/AlGaN superlattices has been proposed and investigated theoretically and experimentally with experimental results showing poor transport. The reason for this poor performance is not fully understood. In this paper, the transport of holes in GaN/AlGaN wurtzite crystal superlattices is investigated through theoretical modelling, examining the role of the composition of the Al[Formula: see text]Ga[Formula: see text]N barrier regions and the thickness of the GaN quantum wells and the AlGaN barriers in determining the position and width of the heavy hole miniband. To consider the transport of the holes in the miniband we examine the effective mass of the miniband and possible scattering mechanisms. In particular, ionized impurity (II) scattering from ionized acceptors in the barrier regions is investigated as it is deemed to be the dominating scattering mechanism degrading hole transport. The energy position of the miniband relative to the ionized impurities and the wavefunction overlap with the ionized acceptors in the barrier regions is investigated to minimize II scattering. Some designs to optimize hole transport through wurtzite p-doped GaN/AlGaN superlattices to minimize II scattering are proposed.
(© 2023. Crown.)
Databáze: MEDLINE
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