Stability of Nanometer-Thick Layered Gallium Chalcogenides and Improvements via Hydrogen Passivation.

Autor:	Gutiérrez Y; Istituto di Chimica della Materia Condensata e delle Tecnologie per l'Energia, ICMATE, CNR, C.so Stati Uniti 4, 35127 Padova, Italy.; Physics Department, University of Oviedo, 33007 Oviedo, Spain., Dicorato S; Institute of Nanotechnology, CNR-NANOTEC, via Orabona 4, 70126 Bari, Italy., Dilonardo E; Institute of Nanotechnology, CNR-NANOTEC, via Orabona 4, 70126 Bari, Italy., Palumbo F; Institute of Nanotechnology, CNR-NANOTEC, via Orabona 4, 70126 Bari, Italy., Giangregorio MM; Institute of Nanotechnology, CNR-NANOTEC, via Orabona 4, 70126 Bari, Italy., Losurdo M; Istituto di Chimica della Materia Condensata e delle Tecnologie per l'Energia, ICMATE, CNR, C.so Stati Uniti 4, 35127 Padova, Italy.
Jazyk:	angličtina
Zdroj:	ACS applied nano materials [ACS Appl Nano Mater] 2023 Oct 26; Vol. 6 (21), pp. 20161-20172. Date of Electronic Publication: 2023 Oct 26 (Print Publication: 2023).
DOI:	10.1021/acsanm.3c03899
Abstrakt:	The gallium monochalcogenides family, comprising gallium sulfide (GaS), gallium selenide (GaSe), and gallium telluride (GaTe), is capturing attention for its applications in energy storage and production, catalysis, photonics, and optoelectronics. This interest originates from their properties, which include an optical bandgap larger than those of most common transition metal dichalcogenides, efficient light absorption, and significant carrier mobility. For any application, stability to air exposure is a fundamental requirement. Here, we perform a comparative study of the stability of layered GaS, GaSe, and GaTe nanometer-thick films down to a few layers with the goal of identifying the most suitable Ga chalcogenide for future integration in photonic and optoelectronic devices. Our study unveils a trend of decreasing air stability from sulfide to selenide and finally to telluride. Furthermore, we demonstrate a hydrogen passivation process to prevent the oxidation of GaSe with a higher feasibility and durability than other state-of-the-art passivation methods proposed in the literature. Competing Interests: The authors declare no competing financial interest. (© 2023 The Authors. Published by American Chemical Society.)
Databáze:	MEDLINE
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