| Autor: |
Hajdeu-Chicarosh E; Institute of Applied Physics, Moldova State University, 5 Academiei str., Chisinau, MD 2028, Republic of Moldova. elenahajdeu@yahoo.com., Rotaru V; Catalonia Institute for Energy Research (IREC), C/Jardins de les Dones de Negre 1, Sant Adrià de Besòs, Barcelona 08930, Spain., Levcenko S; Universität Leipzig, Felix Bloch Institute for Solid State Physics, Linnéstraße 5, Leipzig D-04103, Germany., Serna R; Instituto de Óptica, IO-CSIC, C/Serrano 121, Madrid 28006, Spain., Victorov IA; Belarusian State University of Informatics and Radioelectronics, P. Brovka 6, Minsk 220013, Belarus., Guc M; Catalonia Institute for Energy Research (IREC), C/Jardins de les Dones de Negre 1, Sant Adrià de Besòs, Barcelona 08930, Spain., Caballero R; Instituto de Óptica, IO-CSIC, C/Serrano 121, Madrid 28006, Spain.; Universidad Autónoma de Madrid, Department of Applied Physics, C/Francisco Tomás y Valiente 7, Madrid 28049, Spain., Merino JM; Universidad Autónoma de Madrid, Department of Applied Physics, C/Francisco Tomás y Valiente 7, Madrid 28049, Spain., Arushanov E; Institute of Applied Physics, Moldova State University, 5 Academiei str., Chisinau, MD 2028, Republic of Moldova. elenahajdeu@yahoo.com.; CENTERA Laboratories, Institute of High-Pressure Physics, Polish Academy of Sciences, Warsaw PL-01-142, Poland., León M; Universidad Autónoma de Madrid, Department of Applied Physics, C/Francisco Tomás y Valiente 7, Madrid 28049, Spain. |
| Abstrakt: |
Antimony sulfide (Sb 2 S 3 ) and antimony selenide (Sb 2 Se 3 ) compounds have attracted considerable attention for applications in different optoelectronic devices due to their notable optical and electrical properties, and due to the strong anisotropy of these properties along different crystallographic directions. However, the efficient use of these promising compounds still requires significant efforts in characterization of their fundamental properties. In the present study, Raman scattering and spectroscopic ellipsometry were used to investigate the vibrational and optical properties of Sb 2 Se 3 and Sb 2 S 3 bulk polycrystals grown by the modified Bridgman method. The first technique proved the presence of the desired Sb 2 S 3 and Sb 2 Se 3 phases in the analyzed ingots and confirmed the absence of any preferential crystallographic orientation at the measured surface of the samples. Spectroscopic ellipsometry was performed using a multi-oscillator Tauc-Lorentz dispersion model, and yielded a complex dielectric function of chalcogenides over the range 1.0-4.6 eV with a three phase model (ambient, surface and bulk materials). Finally, spectral data on the refractive index, the extinction coefficient, the absorption coefficient and the reflectivity at normal incidence, R , were obtained, which serve as a reference for the optical modeling of optoelectronic devices based on polycrystalline Sb 2 S 3 and Sb 2 Se 3 compounds. |
