| Autor: |
Tverjanovich AS; Institute of Chemistry, St. Petersburg State University, 198504 St. Petersburg, Russia., Tsiok OB; Institute for High Pressure Physics, Russian Academy of Sciences, Troitsk, 108840 Moscow, Russia., Brazhkin VV; Institute for High Pressure Physics, Russian Academy of Sciences, Troitsk, 108840 Moscow, Russia., Bokova M; Université du Littoral Côte d'Opale, 59140 Dunkerque, France., Cuisset A; Université du Littoral Côte d'Opale, 59140 Dunkerque, France., Bychkov E; Université du Littoral Côte d'Opale, 59140 Dunkerque, France. |
| Abstrakt: |
Glassy GeS 2 , densified at 8.3 GPa, exhibits a strongly reduced bandgap, predominantly tetrahedral Ge environment, enhanced chemical disorder and partial 3-fold coordination of both germanium and sulfur, assuming two possible reaction paths under high pressure: (i) a simple dissociation 2Ge-S ⇄ Ge-Ge + S-S and (ii) a chemical disproportionation GeS 2 ⇄ GeS + S. The observed electronic and structural changes remain intact for at least seven years under ambient conditions but are gradually evolving upon heating. The relaxation kinetics at elevated temperatures, up to the glass transition temperature T g , suggests that complete recovery of the densified glassy GeS 2 over a typical operational T -range of optoelectronic devices will take many thousands of years. The observed logarithmic relaxation and nearly infinite recovery time at room temperature raise questions about the nature of millennia-long phenomena in densified GeS 2 . Two alternative explanations will be discussed: (1) hidden polyamorphism and (2) continuous structural and chemical changes under high pressure. These investigations offer valuable insights into the behavior of glassy GeS 2 under extreme conditions and its potential applications in optoelectronic devices and other advanced technologies. |
