| Autor: |
Li C; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.; International Academy of Optoelectronics at Zhaoqing, South China Normal University, Zhaoqing 526238, Guangdong, People's Republic of China., Qiu T; Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, Queensland 4072, Australia., Li C; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Academy of Advanced Optoelectronics, South China Normal University Guangzhou 510006, People's Republic of China., Cheng B; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.; International Academy of Optoelectronics at Zhaoqing, South China Normal University, Zhaoqing 526238, Guangdong, People's Republic of China., Jin M; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.; International Academy of Optoelectronics at Zhaoqing, South China Normal University, Zhaoqing 526238, Guangdong, People's Republic of China., Zhou G; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.; International Academy of Optoelectronics at Zhaoqing, South China Normal University, Zhaoqing 526238, Guangdong, People's Republic of China., Giersig M; International Academy of Optoelectronics at Zhaoqing, South China Normal University, Zhaoqing 526238, Guangdong, People's Republic of China.; Institute of Fundamental Technological Research, Polish Academy of Sciences, 02-106 Warsaw, Poland., Wang X; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.; International Academy of Optoelectronics at Zhaoqing, South China Normal University, Zhaoqing 526238, Guangdong, People's Republic of China., Gao J; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Academy of Advanced Optoelectronics, South China Normal University Guangzhou 510006, People's Republic of China., Akinoglu EM; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.; International Academy of Optoelectronics at Zhaoqing, South China Normal University, Zhaoqing 526238, Guangdong, People's Republic of China. |
| Abstrakt: |
Transparent electrodes are vital for optoelectronic devices, but their development has been constrained by the limitations of existing materials such as indium tin oxide (ITO) and newer alternatives. All face issues of robustness, flexibility, conductivity, and stability in harsh environments. Addressing this challenge, we developed a flexible, low-cost titanium nitride (TiN) nanomesh transparent electrode showcasing exceptional acid-alkali resistance. The TiN nanomesh electrode, created by depositing a TiN coating on a naturally cracked gel film substrate via a sputtering method, maintains a stable electrical performance through thousands of bending cycles. It exhibits outstanding chemical stability, resisting strong acid and alkali corrosion, which is a key hurdle for current electrodes when in contact with acidic/alkaline materials and solvents during device fabrication. This, coupled with superior light transmission and conductivity (88% at 550 nm with a sheet resistance of ∼200 Ω/sq), challenges the reliance on conventional materials. Our TiN nanomesh electrode, successfully applied in electric heaters and electrically controlled thermochromic devices, offers broad potential beyond harsh environment applications. It enables alternative possibilities for the design and fabrication of future optoelectronics for advancements in this pivotal field. |
