Modulation-doping a correlated electron insulator.

Autor: Mondal D; Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru, Karnataka, India., Mahapatra SR; Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru, Karnataka, India., Derrico AM; Department of Physics, Temple University, Philadelphia, PA, USA., Rai RK; Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, Karnataka, India., Paudel JR; Department of Physics, Temple University, Philadelphia, PA, USA., Schlueter C; Deutsches Elektronen-Synchrotron, DESY, Hamburg, Germany., Gloskovskii A; Deutsches Elektronen-Synchrotron, DESY, Hamburg, Germany., Banerjee R; Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru, Karnataka, India., Hariki A; Department of Physics and Electronics, Graduate School of Engineering, Osaka Metropolitan University, Osaka, Japan., DeGroot FMF; Utrecht University, Inorganic Chemistry and Catalysis Group Universiteitsweg 99, Utrecht, The Netherlands., Sarma DD; Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru, Karnataka, India., Narayan A; Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru, Karnataka, India., Nukala P; Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, Karnataka, India., Gray AX; Department of Physics, Temple University, Philadelphia, PA, USA. axgray@temple.edu., Aetukuri NPB; Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru, Karnataka, India. phani@iisc.ac.in.
Jazyk: angličtina
Zdroj: Nature communications [Nat Commun] 2023 Oct 05; Vol. 14 (1), pp. 6210. Date of Electronic Publication: 2023 Oct 05.
DOI: 10.1038/s41467-023-41816-3
Abstrakt: Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO 2 ) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO 2 -especially without inducing structural changes-has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO 2 -based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard X-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5 × 10 21  cm -3 without inducing any measurable structural changes. We find that the MIT temperature (T MIT ) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e - /vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.
(© 2023. Springer Nature Limited.)
Databáze: MEDLINE
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