Impact of operation voltage and NH 3 annealing on the fatigue characteristics of ferroelectric AlScN thin films grown by sputtering.

Autor: Kim KD; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea. cheolsh@snu.ac.kr., Lee YB; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea. cheolsh@snu.ac.kr., Lee SH; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea. cheolsh@snu.ac.kr., Lee IS; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea. cheolsh@snu.ac.kr., Ryoo SK; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea. cheolsh@snu.ac.kr., Byun SY; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea. cheolsh@snu.ac.kr., Lee JH; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea. cheolsh@snu.ac.kr., Hwang CS; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea. cheolsh@snu.ac.kr.
Jazyk: angličtina
Zdroj: Nanoscale [Nanoscale] 2023 Oct 20; Vol. 15 (40), pp. 16390-16402. Date of Electronic Publication: 2023 Oct 20.
DOI: 10.1039/d3nr02572a
Abstrakt: This work investigates the impact of the magnitude of cycling voltage on the fatigue characteristics of 40 nm-thick AlScN ferroelectric thin film. The fatigue rate and the rejuvenation of remanent polarization vary with the cycling voltage. The primary fatigue mechanism is identified to be the interfacial layer formation and domain wall pinning at high and low cycling voltages, respectively. Additionally, annealing the film under the NH 3 atmosphere decreases the fatigue rate and improves endurance by eliminating impurities in the film. The amount of trapped charges at the interface also decreases after NH 3 annealing, leading to a reduction in leakage current. Furthermore, the ferroelectric performance of the AlScN film is not degraded after the thermal annealing at 900 °C under the NH 3 environment, suggesting its robustness against the severe thermal budget. It is concluded that NH 3 annealing is a promising method to address the reliability issue of the AlScN film.
Databáze: MEDLINE
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