Electrical Properties of Anisotype ZnO:Al/ n -ZnSe/ p -CdTe Heterostructures.

Autor: Maistruk EV; Department of Electronics and Power Engineering, Yuriy Fedkovych Chernivtsi National University, 2 Kotsubynsky St., 58002 Chernivtsi, Ukraine., Orletskyi IG; Department of Electronics and Power Engineering, Yuriy Fedkovych Chernivtsi National University, 2 Kotsubynsky St., 58002 Chernivtsi, Ukraine., Ilashchuk MI; Department of Electronics and Power Engineering, Yuriy Fedkovych Chernivtsi National University, 2 Kotsubynsky St., 58002 Chernivtsi, Ukraine., Koziarskyi IP; Department of Electronics and Power Engineering, Yuriy Fedkovych Chernivtsi National University, 2 Kotsubynsky St., 58002 Chernivtsi, Ukraine., Koziarskyi DP; Department of Electronics and Power Engineering, Yuriy Fedkovych Chernivtsi National University, 2 Kotsubynsky St., 58002 Chernivtsi, Ukraine.
Jazyk: angličtina
Zdroj: ACS omega [ACS Omega] 2023 Sep 04; Vol. 8 (37), pp. 34146-34151. Date of Electronic Publication: 2023 Sep 04 (Print Publication: 2023).
DOI: 10.1021/acsomega.3c05362
Abstrakt: ZnO:Al/ n -ZnSe/ p -CdTe anisotype heterostructures with diode properties were fabricated by the high-frequency magnetron deposition of ZnO:Al and n -ZnSe thin films onto the surface of crystalline p -CdTe. The flow of currents limited by the space charge at forward voltages up to 0.45 V and tunneling currents at V > 0.45 V was established. A change in these current flow mechanisms was observed at reverse voltages V = -0.6 V. The main part of the energy barrier q ϕ k = 1 eV of the ZnO:Al/ n -ZnSe/ p -CdTe heterostructure was formed in the p -CdTe substrate, which was established from studies of capacitance-voltage ( C - V ) characteristics. A model of the energy diagram of the heterostructure is proposed.
Competing Interests: The authors declare no competing financial interest.
(© 2023 The Authors. Published by American Chemical Society.)
Databáze: MEDLINE
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