Increased Mobility and Reduced Hysteresis of MoS 2 Field-Effect Transistors via Direct Surface Precipitation of CsPbBr 3 -Nanoclusters for Charge Transfer Doping.

Autor: Kang YZ; Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, 1, Chungdae-ro, Seowon-gu, Cheongju, Chungcheongbuk-do 28644, Republic of Korea., An GH; Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, 1, Chungdae-ro, Seowon-gu, Cheongju, Chungcheongbuk-do 28644, Republic of Korea., Jeon MG; Department of Materials Science and Engineering, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea., Shin SJ; Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, 1, Chungdae-ro, Seowon-gu, Cheongju, Chungcheongbuk-do 28644, Republic of Korea., Kim SJ; Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, 1, Chungdae-ro, Seowon-gu, Cheongju, Chungcheongbuk-do 28644, Republic of Korea., Choi M; Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, 1, Chungdae-ro, Seowon-gu, Cheongju, Chungcheongbuk-do 28644, Republic of Korea., Lee JB; Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, 1, Chungdae-ro, Seowon-gu, Cheongju, Chungcheongbuk-do 28644, Republic of Korea., Kim TY; Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, 1, Chungdae-ro, Seowon-gu, Cheongju, Chungcheongbuk-do 28644, Republic of Korea., Rahman IN; Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, 1, Chungdae-ro, Seowon-gu, Cheongju, Chungcheongbuk-do 28644, Republic of Korea., Seo HY; Department of Advanced Material Engineering, Chungbuk National University, 1, Chungdae-ro, Seowon-gu, Cheongju, Chungcheongbuk-do 28644, Republic of Korea., Oh S; Department of Advanced Material Engineering, Chungbuk National University, 1, Chungdae-ro, Seowon-gu, Cheongju, Chungcheongbuk-do 28644, Republic of Korea., Cho B; Department of Advanced Material Engineering, Chungbuk National University, 1, Chungdae-ro, Seowon-gu, Cheongju, Chungcheongbuk-do 28644, Republic of Korea., Choi J; Department of Materials Science and Engineering, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea., Lee HS; Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, 1, Chungdae-ro, Seowon-gu, Cheongju, Chungcheongbuk-do 28644, Republic of Korea.
Jazyk: angličtina
Zdroj: Nano letters [Nano Lett] 2023 Oct 11; Vol. 23 (19), pp. 8914-8922. Date of Electronic Publication: 2023 Sep 18.
DOI: 10.1021/acs.nanolett.3c02293
Abstrakt: Transition-metal dichalcogenides (TMDs) and metal halide perovskites (MHPs) have been investigated for various applications, owing to their unique physical properties and excellent optoelectronic functionalities. TMD monolayers synthesized via chemical vapor deposition (CVD), which are advantageous for large-area synthesis, exhibit low mobility and prominent hysteresis in the electrical signals of field-effect transistors (FETs) because of their native defects. In this study, we demonstrate an increase in electrical mobility by ∼170 times and reduced hysteresis in the current-bias curves of MoS 2 FETs hybridized with CsPbBr 3 for charge transfer doping, which is implemented via solution-based CsPbBr 3 -nanocluster precipitation on CVD-grown MoS 2 monolayer FETs. Electrons injected from CsPbBr 3 into MoS 2 induce heavy n-doping and heal point defects in the MoS 2 channel layer, thus significantly increasing mobility and reducing hysteresis in the hybrid FETs. Our results provide a foundation for improving the reliability and performance of TMD-based FETs by hybridizing them with solution-based perovskites.
Databáze: MEDLINE
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