Tungsten-SiO 2 -Based Planar Field Emission Microtriodes with Different Electrode Topologies.

Autor: Avotina L; Institute of Chemical Physics, University of Latvia, Jelgavas Street 1, LV-1004 Riga, Latvia., Bikse L; Institute of Solid State Physics, University of Latvia, Kengaraga Street 8, LV-1063 Riga, Latvia., Dekhtyar Y; Institute of Biomedical Engineering and Nanotechnologies, Riga Technical University, 6B Kipsalas Street, LV-1048 Riga, Latvia., Goldmane AE; Institute of Chemical Physics, University of Latvia, Jelgavas Street 1, LV-1004 Riga, Latvia., Kizane G; Institute of Chemical Physics, University of Latvia, Jelgavas Street 1, LV-1004 Riga, Latvia., Muhin A; Joint Stock Company 'ALFA RPAR', 140 Ropazu Street, LV-1006 Riga, Latvia., Romanova M; Institute of Biomedical Engineering and Nanotechnologies, Riga Technical University, 6B Kipsalas Street, LV-1048 Riga, Latvia., Smits K; Institute of Solid State Physics, University of Latvia, Kengaraga Street 8, LV-1063 Riga, Latvia., Sorokins H; Institute of Biomedical Engineering and Nanotechnologies, Riga Technical University, 6B Kipsalas Street, LV-1048 Riga, Latvia., Vilken A; Institute of Biomedical Engineering and Nanotechnologies, Riga Technical University, 6B Kipsalas Street, LV-1048 Riga, Latvia., Zaslavskis A; Joint Stock Company 'ALFA RPAR', 140 Ropazu Street, LV-1006 Riga, Latvia.
Jazyk: angličtina
Zdroj: Materials (Basel, Switzerland) [Materials (Basel)] 2023 Aug 24; Vol. 16 (17). Date of Electronic Publication: 2023 Aug 24.
DOI: 10.3390/ma16175781
Abstrakt: This study examines the electrical properties and layer quality of field emission microtriodes that have planar electrode geometry and are based on tungsten (W) and silicon dioxide (SiO 2 ). Two types of microtriodes were analyzed: one with a multi-tip cathode fabricated using photolithography (PL) and the other with a single-tip cathode fabricated using a focused ion beam (FIB). Atomic force microscopy (AFM) analysis revealed surface roughness of the W layer in the order of several nanometers (Ra = 3.8 ± 0.5 nm). The work function values of the Si substrate, SiO 2 layer, and W layer were estimated using low-energy ultraviolet photoelectron emission (PE) spectroscopy and were 4.71 eV, 4.85 eV, and 4.67 eV, respectively. The homogeneity of the W layer and the absence of oxygen and silicon impurities were confirmed via X-ray photoelectron spectroscopy (XPS). The PL microtriode and the FIB microtriode exhibited turn-on voltages of 110 V and 50 V, respectively, both demonstrating a field emission current of 0.4 nA. The FIB microtriode showed significantly improved field emission efficiency compared to the PL microtriode, attributed to a higher local electric field near the cathode.
Databáze: MEDLINE
Nepřihlášeným uživatelům se plný text nezobrazuje