Four-Point Measurement Setup for Correlative Microscopy of Nanowires.

Autor:	Pruchnik BC; Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland., Fidelus JD; Time and Length Department, Central Office of Measures, Elektoralna 2, 00-139 Warsaw, Poland., Gacka E; Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland., Kwoka K; Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland., Pruchnik J; Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland., Piejko A; Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland., Usydus Ł; Electricity and Radiation Department, Central Office of Measures, Elektoralna 2, 00-139 Warsaw, Poland., Zaraska L; Department of Physical Chemistry and Electrochemistry, Faculty of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387 Krakow, Poland., Sulka GD; Department of Physical Chemistry and Electrochemistry, Faculty of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387 Krakow, Poland., Piasecki T; Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland., Gotszalk TP; Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-370 Wroclaw, Poland.
Jazyk:	angličtina
Zdroj:	Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2023 Aug 30; Vol. 13 (17). Date of Electronic Publication: 2023 Aug 30.
DOI:	10.3390/nano13172451
Abstrakt:	The measurement method, which utilizes nanomanipulation of the nanowires onto a specially prepared substrate, was presented. It introduced a four-point resistance measurement setup on a chip suited for scanning probe microscopy measurements, integrating connectors and a nanowire specimen. A study on the resistance and resistivity of the thermally post-treated ZnO nanowires at 200 °C and 300 °C in air showed the dependence of these electrical parameters on the annealing temperature. The investigations of the electrical properties of blocks built on the basis of nanowires and their related devices could provide a useful guide not only for designing, fabricating and optimizing electromechanical nanodevices based on nanowires but also for their safe operation in future electronic applications.
Databáze:	MEDLINE
Externí odkaz:	Zobrazit plný text záznamu