Silicon-Lattice-Matched Boron-Doped Gallium Phosphide: A Scalable Acousto-Optic Platform.

Autor: Yama NS; Electrical and Computer Engineering Department, University of Washington, Seattle, WA, 98105, USA., Chen IT; Electrical and Computer Engineering Department, University of Washington, Seattle, WA, 98105, USA., Chakravarthi S; Physics Department, University of Washington, Seattle, WA, 98105, USA., Li B; Electrical and Computer Engineering Department, University of Washington, Seattle, WA, 98105, USA., Pederson C; Physics Department, University of Washington, Seattle, WA, 98105, USA., Matthews BE; Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland, Washington, 99352, USA., Spurgeon SR; Physics Department, University of Washington, Seattle, WA, 98105, USA.; Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland, Washington, 99352, USA., Perea DE; Earth and Biological Sciences Directorate, Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington, 99352, USA., Wirth MG; Earth and Biological Sciences Directorate, Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington, 99352, USA., Sushko PV; Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington, 99352, USA., Li M; Electrical and Computer Engineering Department, University of Washington, Seattle, WA, 98105, USA.; Physics Department, University of Washington, Seattle, WA, 98105, USA., Fu KC; Electrical and Computer Engineering Department, University of Washington, Seattle, WA, 98105, USA.; Physics Department, University of Washington, Seattle, WA, 98105, USA.; Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington, 99352, USA.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Feb; Vol. 36 (5), pp. e2305434. Date of Electronic Publication: 2023 Dec 06.
DOI: 10.1002/adma.202305434
Abstrakt: The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide bandgap, strong nonlinear properties, and large acousto-optic figure of merit. This study demonstrates that silicon-lattice-matched boron-doped GaP (BGaP), grown at the 12-inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths, respectively. It further demonstrates the electromechanical generation of low-loss acoustic waves and an integrated acousto-optic (AO) modulator. High-resolution spatial and compositional mapping, combined with ab initio calculations, indicate two candidates for the excess optical loss in the visible band: the silicon-GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths.
(© 2023 Wiley-VCH GmbH.)
Databáze: MEDLINE
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