Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001).

Autor:	Lundgren EAS; London Centre for Nanotechnology, University College London, WC1H 0AH London, U.K.; Department of Physics and Astronomy, University College London, WC1E 6BT London, U.K., Byron C; Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States., Constantinou P; London Centre for Nanotechnology, University College London, WC1H 0AH London, U.K.; Department of Physics and Astronomy, University College London, WC1E 6BT London, U.K.; Paul Scherrer Institute, 5232 Villigen, Switzerland., Stock TJZ; London Centre for Nanotechnology, University College London, WC1H 0AH London, U.K.; Department of Electronic and Electrical Engineering, University College London, WC1E 7JE London, U.K., Curson NJ; London Centre for Nanotechnology, University College London, WC1H 0AH London, U.K.; Department of Electronic and Electrical Engineering, University College London, WC1E 7JE London, U.K., Thomsen L; Australian Synchrotron, ANSTO, Clayton, Victoria 3168, Australia., Warschkow O; London Centre for Nanotechnology, University College London, WC1H 0AH London, U.K., Teplyakov AV; Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States., Schofield SR; London Centre for Nanotechnology, University College London, WC1H 0AH London, U.K.; Department of Physics and Astronomy, University College London, WC1E 6BT London, U.K.
Jazyk:	angličtina
Zdroj:	The journal of physical chemistry. C, Nanomaterials and interfaces [J Phys Chem C Nanomater Interfaces] 2023 Aug 14; Vol. 127 (33), pp. 16433-16441. Date of Electronic Publication: 2023 Aug 14 (Print Publication: 2023).
DOI:	10.1021/acs.jpcc.3c03916
Abstrakt:	We investigate the adsorption and thermal decomposition of triphenyl bismuth (TPB) on the silicon (001) surface using atomic-resolution scanning tunneling microscopy, synchrotron-based X-ray photoelectron spectroscopy, and density functional theory calculations. Our results show that the adsorption of TPB at room temperature creates both bismuth-silicon and phenyl-silicon bonds. Annealing above room temperature leads to increased chemical interactions between the phenyl groups and the silicon surface, followed by phenyl detachment and bismuth subsurface migration. The thermal decomposition of the carbon fragments leads to the formation of silicon carbide at the surface. This chemical understanding of the process allows for controlled bismuth introduction into the near surface of silicon and opens pathways for ultra-shallow doping approaches. Competing Interests: The authors declare no competing financial interest. (© 2023 American Chemical Society.)
Databáze:	MEDLINE
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