Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors.

Autor: Tseng R; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan., Wang ST; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan., Ahmed T; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan., Pan YY; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan., Chen SC; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan., Shih CC; Research & Development, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan., Tsai WW; Research & Development, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan., Chen HC; Research & Development, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan., Kei CC; Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, Taiwan., Chou TT; Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, Taiwan., Hung WC; Department of Mechanical Engineering, National Central University, Jhongli City, Taiwan.; K-Jet Laser Tek Inc., Hsinchu, Taiwan., Chen JC; Department of Mechanical Engineering, National Central University, Jhongli City, Taiwan., Kuo YH; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan., Lin CL; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan., Woon WY; Research & Development, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan. wywoona@tsmc.com., Liao SS; Research & Development, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan., Lien DH; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan. dhlien@nycu.edu.tw.
Jazyk: angličtina
Zdroj: Nature communications [Nat Commun] 2023 Aug 28; Vol. 14 (1), pp. 5243. Date of Electronic Publication: 2023 Aug 28.
DOI: 10.1038/s41467-023-41041-y
Abstrakt: The scaling of transistors with thinner channel thicknesses has led to a surge in research on two-dimensional (2D) and quasi-2D semiconductors. However, modulating the threshold voltage (V T ) in ultrathin transistors is challenging, as traditional doping methods are not readily applicable. In this work, we introduce a optical-thermal method, combining ultraviolet (UV) illumination and oxygen annealing, to achieve broad-range V T tunability in ultrathin In 2 O 3 . This method can achieve both positive and negative V T tuning and is reversible. The modulation of sheet carrier density, which corresponds to V T shift, is comparable to that obtained using other doping and capacitive charging techniques in other ultrathin transistors, including 2D semiconductors. With the controllability of V T , we successfully demonstrate the realization of depletion-load inverter and multi-state logic devices, as well as wafer-scale V T modulation via an automated laser system, showcasing its potential for low-power circuit design and non-von Neumann computing applications.
(© 2023. Springer Nature Limited.)
Databáze: MEDLINE
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